Memory device, semiconductor device, and electronic device

ABSTRACT

A memory device which includes a gain-cell memory cell formed using an n-channel transistor and in which a potential lower than a potential applied to a bit line is not necessary is provided. Memory cells included in the memory device are arranged in a matrix, and each of the memory cells is connected to a write word line, a write bit line, a read word line, and a read bit line. The write word line is arranged in parallel to one of directions of a row and a column of memory cells arranged in a matrix, and the write bit line is arranged in parallel to the other of the directions of the row and the column. The read word line is arranged in parallel to the one of the directions of the row and the column of the memory cells arranged in a matrix, and the read bit line is arranged in parallel to the other of the directions of the row and the column.

TECHNICAL FIELD

One embodiment of the present invention relates to a memory device. Inparticular, one embodiment of the present invention relates to a memorydevice that can function by utilizing semiconductor characteristics.

One embodiment of the present invention relates to a semiconductordevice. Note that in this specification and the like, a semiconductordevice refers to all devices that can function by utilizingsemiconductor characteristics. For example, an integrated circuit, achip including an integrated circuit, an electronic component includinga packaged chip, and an electronic device including an integratedcircuit are examples of a semiconductor device.

Note that one embodiment of the present invention is not limited to theabove technical field. The technical field of the invention disclosed inthis specification and the like relates to an object, a method, or amanufacturing method. One embodiment of the present invention relates toa process, a machine, manufacture, or a composition of matter.

BACKGROUND ART

In recent years, as a semiconductor that can be used in a transistor, anoxide semiconductor has been attracting attention. A transistor using anoxide semiconductor (also referred to as an oxide semiconductortransistor or an OS transistor) is a thin film transistor and can bestacked. For example, a first circuit can be formed using a Sitransistor formed on a single crystal silicon substrate, and a secondcircuit using an OS transistor can be stacked thereabove. Moreover, anOS transistor has a characteristic of extremely low leakage current inan off state (also referred to as off-state current).

Patent Document 1 discloses a semiconductor device including a pluralityof memory cells each using an OS transistor over a semiconductorsubstrate where peripheral circuits such as a driver circuit and acontrol circuit are formed, and an example in which an OS transistor isused in a memory cell of a DRAM (Dynamic Random Access Memory). Forexample, when a peripheral circuit is formed using a Si transistorformed on a single crystal silicon substrate and a memory cell using anOS transistor is stacked thereabove, a chip area can be reduced.

Patent Document 2 discloses a semiconductor device including a pluralityof memory cells using an OS transistor and a transistor other than an OStransistor (e.g., a Si transistor), and an example in which an OStransistor is used in a gain-cell memory cell with two transistors andone capacitor (the capacitor may be omitted). A gain-cell memory cellcan operate as a memory by amplifying accumulated charges by the closesttransistor even when the capacitance of the capacitor is small. When anOS transistor having a characteristic of extremely low off-state currentis used in the gain-cell memory cell, accumulated charges can beretained for a long time.

Note that in this specification and the like, a semiconductor deviceformed using a gain-cell memory cell using an OS transistor is called a“NOSRAM (registered trademark, Nonvolatile Oxide Semiconductor RandomAccess Memory)”. Hereinafter, a semiconductor device including a memorycell, a NOSRAM, and a semiconductor device including a peripheralcircuit and a plurality of memory cells are referred to as a memorydevice or a memory.

Meanwhile, not only single-component metal oxides, such as indium oxideand zinc oxide, but also multi-component metal oxides are known as oxidesemiconductors, for example. Among the multi-component metal oxides, inparticular, an In—Ga—Zn oxide (also referred to as IGZO) has beenactively studied.

From the studies on IGZO, a CAAC (c-axis aligned crystalline) structureand an nc (nanocrystalline) structure, which are not single crystal noramorphous, have been found in an oxide semiconductor (see Non-PatentDocument 1 to Non-Patent Document 3).

Non-Patent Document 1 and Non-Patent Document 2 disclose a technique forfabricating a transistor using an oxide semiconductor having a CAACstructure. Moreover, Non-Patent Document 4 and Non-Patent Document 5disclose that a fine crystal is included even in an oxide semiconductorthat has lower crystallinity than an oxide semiconductor having the CAACstructure or the nc structure.

Non-Patent Document 6 reports the extremely low off-state current of atransistor using an oxide semiconductor, and Non-Patent Document 7 andNon-Patent Document 8 report an LSI and a display which utilize such aproperty of extremely low off-state current.

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    2012-256820-   [Patent Document 2] Japanese Published Patent Application No.    2012-256400

Non-Patent Document

-   [Non-Patent Document 1] S. Yamazaki et al., “SID Symposium Digest of    Technical Papers”, 2012, volume 43, issue 1, pp. 183-186.-   [Non-Patent Document 2] S. Yamazaki et al., “Japanese Journal of    Applied Physics”, 2014, volume 53, Number 4S, pp.    04ED18-1-04ED18-10.-   [Non-Patent Document 3] S. Ito et al., “The Proceedings of AM-FPD′13    Digest of Technical Papers”, 2013, pp. 151-154. [Non-Patent Document    4] S. Yamazaki et al., “ECS Journal of Solid State Science and    Technology”, 2014, volume 3, issue 9, pp. Q3012-Q3022.-   [Non-Patent Document 5] S. Yamazaki, “ECS Transactions”, 2014,    volume 64, issue 10, pp. 155-164.-   [Non-Patent Document 6] K. Kato et al., “Japanese Journal of Applied    Physics”, 2012, volume 51, pp. 021201-1-021201-7.-   [Non-Patent Document 7] S. Matsuda et al., “2015 Symposium on VLSI    Technology Digest of Technical Papers”, 2015, pp. T216-T217.-   [Non-Patent Document 8] S. Amano et al., “SID Symposium Digest of    Technical Papers”, 2010, volume 41, issue 1, pp. 626-629.

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

As disclosed in Patent Document 2, in the case where a memory cell isformed using an OS transistor and a transistor other than an OStransistor, for example, in the case where a memory cell is formed usinga Si transistor formed over a single crystal silicon substrate and an OStransistor stacked thereabove, unlike in Patent Document 1, a peripheralcircuit cannot be formed on the single crystal silicon substratepositioned below the memory cell. More accurately, in order to form theperipheral circuit on the single crystal silicon substrate positionedbelow the memory cell, a region for forming the peripheral circuit needsto be provided between the memory cells.

Alternatively, as in Patent Document 1, transistors forming the memorycells needs to be only OS transistors in order to stack, over thesemiconductor substrate where the peripheral circuit is formed, thememory cells using OS transistors. The OS transistor is an n-channeltransistor; thus, when gain-cell memory cells disclosed in PatentDocument 2 are formed using only n-channel transistors, a potentiallower than a potential applied to a bit line needs to be applied to aword line. For example, in the case where the lowest potential amongpotentials applied to the bit line is GND, a potential lower than GND,i.e., a negative potential needs to be applied to the word line.

An object of one embodiment of the present invention is to provide amemory device including a gain-cell memory cell, where the memory cellusing an OS transistor is stacked over a semiconductor substrate where aperipheral circuit is formed and where a negative potential does notneed to be applied. Another object of one embodiment of the presentinvention is to provide a memory device which includes a gain-cellmemory cell and has a small chip area and where a negative potentialdoes not need to be applied. Another object of one embodiment of thepresent invention is to provide an electronic device including a memorydevice which includes a gain-cell memory cell and has a small chip areaand where a negative potential does not need to be applied.

Note that one embodiment of the present invention does not necessarilyachieve all the above objects and only needs to achieve at least one ofthe objects. The descriptions of the above objects do not preclude theexistence of other objects. Objects other than these will be apparentfrom the description of the specification, the claims, the drawings, andthe like, and objects other than these can be derived from thedescription of the specification, the claims, the drawings, and thelike.

Means for Solving the Problems

One embodiment of the present invention is a memory device including amemory cell array and a peripheral circuit. The memory cell arrayincludes m×n (each of m and n is an integer greater than or equal to 1)memory cells, n first wirings, n second wirings, m third wirings, and mfourth wirings. The m×n memory cells are arranged in a matrix, and eachof the memory cells is electrically connected to the first to fourthwirings and includes a first transistor and a second transistor. One ofa source and a drain of the first transistor is electrically connectedto the first wiring, the other of the source and the drain of the firsttransistor is electrically connected to a gate of the second transistor,and a gate of the first transistor is electrically connected to thethird wiring. One of a source and a drain of the second transistor iselectrically connected to the second wiring, and the other of the sourceand the drain of the second transistor is electrically connected to thefourth wiring. Each of the first transistor and the second transistor isan n-channel transistor and includes a metal oxide in a channelformation region. The peripheral circuit includes a first circuit, asecond circuit, and a controller, and the first circuit is electricallyconnected to the first wiring and the second wiring and has a functionof writing data to the memory cell and a function of reading data fromthe memory cell. The second circuit is electrically connected to thethird wiring and the fourth wiring and has a function of driving thethird wiring and the fourth wiring, and the controller has a function ofcontrolling the first circuit and the second circuit.

Another embodiment of the present invention is a memory device includinga memory cell array and a peripheral circuit. The memory cell arrayincludes m×n (each of m and n is an integer greater than or equal to 1)memory cells, n first wirings, n second wirings, m third wirings, and mfourth wirings. The m×n memory cells are arranged in a matrix, and eachof the memory cells is electrically connected to the first to fourthwirings and includes a first transistor and a second transistor. One ofa source and a drain of the first transistor is electrically connectedto the first wiring, the other of the source and the drain iselectrically connected to a gate of the second transistor, and a gate ofthe first transistor is electrically connected to the third wiring. Oneof a source and a drain of the second transistor is electricallyconnected to the second wiring, and the other of the source and thedrain is electrically connected to the fourth wiring. Each of the firsttransistor and the second transistor is an n-channel transistor andincludes a metal oxide in a channel formation region. The peripheralcircuit includes a first circuit, a second circuit, and a controller,and the first circuit is electrically connected to the first wiring andthe second wiring and has a function of writing data to the memory celland a function of reading data from the memory cell. The second circuitis electrically connected to the third wiring and the fourth wiring andhas a function of driving the third wiring and the fourth wiring, andthe controller has a function of controlling the first circuit and thesecond circuit and has a function of a serial peripheral interface.

Another embodiment of the present invention is a memory device includinga memory cell array and a peripheral circuit. The memory cell arrayincludes m×n (each of m and n is an integer greater than or equal to 1)memory cells, n first wirings, n second wirings, m third wirings, and mfourth wirings. The m×n memory cells are arranged in a matrix, and eachof the memory cells is electrically connected to the first to fourthwirings and includes a first transistor and a second transistor. One ofa source and a drain of the first transistor is electrically connectedto the first wiring, the other of the source and the drain iselectrically connected to a gate of the second transistor, and a gate ofthe first transistor is electrically connected to the third wiring. Oneof a source and a drain of the second transistor is electricallyconnected to the second wiring, and the other of the source and thedrain is electrically connected to the fourth wiring. Each of the firsttransistor and the second transistor is an n-channel transistor andincludes a metal oxide in a channel formation region. The peripheralcircuit includes a first circuit, a second circuit, a controller, and apage buffer, the first circuit is electrically connected to the firstwiring and the second wiring, the page buffer has a function oftemporarily storing data, and the controller has a function of writingdata to the page buffer and a function of reading data from the pagebuffer. The first circuit has a function of writing data read from thepage buffer, to the memory cell and a function of writing data read fromthe memory cell, to the page buffer. The second circuit is electricallyconnected to the third wiring and the fourth wiring and has a functionof driving the third wiring and the fourth wiring, and the controllerhas a function of controlling the first circuit and the second circuitand a function of a serial peripheral interface.

In the above embodiment, each of the memory cells includes a capacitor,one electrode of the capacitor is electrically connected to the gate ofthe second transistor, and the other electrode of the capacitor iselectrically connected to a wiring supplied with a predeterminedpotential.

In the above embodiment, the first circuit supplies a first potential ora second potential to the first wiring and the second wiring. The secondcircuit supplies the first potential or the second potential to thefourth wiring and supplies the first potential or a third potential tothe third wiring.

In the above embodiment, each of the first circuit and the secondcircuit includes a transistor formed on a semiconductor substrate, andthe first transistor and the second transistor are stacked above thesemiconductor substrate.

Effect of the Invention

According to one embodiment of the present invention, a memory deviceincluding a gain-cell memory cell, where the memory cell using an OStransistor is stacked above a semiconductor substrate where a peripheralcircuit is formed and where a negative potential does not need to beapplied can be provided. According to one embodiment of the presentinvention, a memory device which includes a gain-cell memory cell andhas a small chip area and where a negative potential does not need to beapplied can be provided. According to one embodiment of the presentinvention, an electronic device including a memory device which includesa gain-cell memory cell and has a small chip area and where a negativepotential does not need to be applied can be provided.

Note that the descriptions of the effects do not disturb the existenceof other effects. One embodiment of the present invention does notnecessarily have all the effects. Effects other than these will beapparent from the descriptions of the specification, the claims, thedrawings, and the like, and effects other than these can be derived fromthe descriptions of the specification, the claims, the drawings, and thelike.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic perspective view illustrating a structure exampleof a memory device.

FIG. 2 is a schematic view showing a relation between V_(gs) and I_(ds)of a transistor.

FIG. 3 is a block diagram illustrating a structure example of a memorydevice.

FIG. 4(A) is a diagram illustrating a memory cell array, and FIGS. 4(B)and 4(C) are circuit diagrams illustrating structure examples of memorycells.

FIGS. 5(A), 5(B), 5(C), 5(D), 5(E), and 5(F) are circuit diagramsillustrating structure examples of memory cells.

FIG. 6 is a diagram illustrating a circuit forming a bit line drivercircuit.

FIG. 7 is a timing chart showing an operation example of a memory cell.

FIG. 8 is a block diagram illustrating a structure example of a memorydevice.

FIG. 9 is a cross-sectional view illustrating a structure example of asemiconductor device.

FIGS. 10(A), 10(B), and 10(C) are cross-sectional views illustratingstructure examples of transistors.

FIG. 11(A) is a top view illustrating a structure example of atransistor, and FIGS. 11(B) and 11(C) are cross-sectional viewsillustrating the structure example of the transistor.

FIG. 12(A) is a top view illustrating a structure example of atransistor, and FIGS. 12(B) and 12(C) are cross-sectional viewsillustrating the structure example of the transistor.

FIG. 13(A) is a top view illustrating a structure example of atransistor, and FIGS. 13(B) and 13(C) are cross-sectional viewsillustrating the structure example of the transistor.

FIG. 14(A) is a top view illustrating a structure example of atransistor, and FIGS. 14(B) and 14(C) are cross-sectional viewsillustrating the structure example of the transistor.

FIG. 15(A) is a top view illustrating a structure example of atransistor, and FIGS. 15(B) and 15(C) are cross-sectional viewsillustrating the structure example of the transistor.

FIG. 16(A) is a top view illustrating a structure example of atransistor, and FIG. 16(B) is a perspective view illustrating thestructure example of the transistor.

FIGS. 17(A) and 17(B) are cross-sectional views illustrating a structureexample of a transistor.

FIG. 18 is a diagram illustrating a product image.

FIGS. 19(A), 19(B), 19(C), 19(D), 19(E1), and 19(E2) are diagramsillustrating structure examples of electronic devices.

FIGS. 20(A) and 20(B) are diagrams illustrating a structure example ofan electronic device.

FIGS. 21(A), 21(B), and 21(C) are diagrams illustrating a structureexample of an electronic device.

FIGS. 22(A) and 22(B) are diagrams illustrating structure examples ofelectronic devices.

MODE FOR CARRYING OUT THE INVENTION

Embodiments will be described below with reference to the drawings.However, the embodiments can be implemented with many different modes,and it will be readily appreciated by those skilled in the art thatmodes and details thereof can be changed in various ways withoutdeparting from the spirit and scope thereof. Thus, the present inventionshould not be interpreted as being limited to the following descriptionof the embodiments.

A plurality of embodiments described below can be combined asappropriate. In addition, in the case where a plurality of structureexamples are described in one embodiment, the structure examples can becombined as appropriate.

Note that in the drawings attached to this specification, the blockdiagram in which components are classified according to their functionsand shown as independent blocks is illustrated; however, it is difficultto separate actual components completely according to their functions,and it is possible for one component to relate to a plurality offunctions.

In the drawings and the like, the size, the layer thickness, the region,or the like is exaggerated for clarity in some cases. Thus, they are notnecessarily limited to the illustrated scale. The drawings schematicallyshow ideal examples, and shapes, values, or the like are not limited toshapes, values, or the like shown in the drawings.

In the drawings and the like, the same elements, elements having similarfunctions, elements formed of the same material, elements formed at thesame time, or the like are sometimes denoted by the same referencenumerals, and description thereof is not repeated in some cases.

Moreover, in this specification and the like, the term “film” and theterm “layer” can be interchanged with each other. For example, the term“conductive layer” can be changed into the term “conductive film” insome cases. For another example, the term “insulating film” can bechanged into the term “insulating layer” in some cases.

In this specification and the like, the terms for describing arrangementsuch as “over” and “below” do not necessarily mean “directly over” and“directly below”, respectively, in the positional relationship betweencomponents. For example, the expression “a gate electrode over a gateinsulating layer” does not exclude the case where there is an additionalcomponent between the gate insulating layer and the gate electrode.

In this specification and the like, ordinal numbers such as “first”,“second”, and “third” are used in order to avoid confusion amongcomponents, and the terms do not limit the components numerically.

In this specification and the like, “electrically connected” includesthe case where connection is made through an “object having any electricfunction”. Here, there is no particular limitation on the “object havingany electric function” as long as electric signals can be transmittedand received between the connected components. Examples of the “objecthaving any electric function” include a switching element such as atransistor, a resistor, an inductor, a capacitor, and other elementswith a variety of functions as well as an electrode and a wiring.

In this specification and the like, “voltage” often refers to apotential difference between a given potential and a reference potential(e.g., a ground potential). Thus, a voltage and a potential differencecan be interchanged with each other.

In this specification and the like, a transistor is an element having atleast three terminals including a gate, a drain, and a source. A channelformation region is included between the drain (a drain terminal, adrain region, or a drain electrode) and the source (a source terminal, asource region, or a source electrode), and current can flow between thesource and the drain through the channel formation region. Note that inthis specification and the like, a channel formation region refers to aregion through which current mainly flows.

Furthermore, functions of a source and a drain might be switched when atransistor of opposite polarity is employed or a direction of currentflow is changed in circuit operation, for example. Thus, the terms ofsource and drain are interchangeable for use in this specification andthe like.

Unless otherwise specified, an off-state current in this specificationand the like refers to a drain current of a transistor in an off state(also referred to as a non-conducting state or a cutoff state). Unlessotherwise specified, the off state of an n-channel transistor refers toa state where voltage Vgs of a gate with respect to a source is lowerthan a threshold voltage Vth, and the off state of a p-channeltransistor refers to a state where the voltage Vgs of a gate withrespect to a source is higher than the threshold voltage Vth. That is,the off-state current of an n-channel transistor sometimes refers to adrain current at the time when the voltage Vgs of a gate with respect toa source is lower than the threshold voltage Vth.

In the above description of the off-state current, the drain may bereplaced with the source. That is, the off-state current sometimesrefers to a source current when the transistor is in an off state. Inaddition, leakage current sometimes expresses the same meaning asoff-state current. In this specification and the like, the off-statecurrent sometimes refers to a current that flows between a source and adrain when a transistor is in the off state.

In this specification and the like, a metal oxide means an oxide ofmetal in a broad sense. Metal oxides are classified into an oxideinsulator, an oxide conductor (including a transparent oxide conductor),an oxide semiconductor, and the like.

For example, in the case where a metal oxide is used in a channelformation region of a transistor, the metal oxide is called an oxidesemiconductor in some cases. That is, in the case where a metal oxidehas at least one of an amplifying function, a rectifying function, and aswitching function, the metal oxide can be called a metal oxidesemiconductor. In other words, a transistor containing a metal oxide ina channel formation region can be referred to as an “oxide semiconductortransistor” or an “OS transistor”. Similarly, the “transistor using anoxide semiconductor” described above is also a transistor containing ametal oxide in a channel formation region.

Furthermore, in this specification and the like, a metal oxidecontaining nitrogen is also referred to as a metal oxide in some cases.A metal oxide containing nitrogen may be referred to as a metaloxynitride. The details of a metal oxide will be described later.

Embodiment 1

In this embodiment, structure examples of a memory device according toone embodiment of the present invention will be described. The memorydevice according to one embodiment of the present invention is a memorydevice that can function by utilizing semiconductor characteristics, andis also called a memory. In addition, the memory device according to oneembodiment of the present invention has a structure in which a memorycell formed using an OS transistor is stacked over a semiconductorsubstrate where a peripheral circuit is formed.

<Schematic Perspective View of Memory Device>

FIG. 1 is a schematic perspective view illustrating a structure exampleof a memory device 100 according to one embodiment of the presentinvention.

The memory device 100 includes a layer 101 and a layer 201 and has astructure in which the layer 201 is stacked above the layer 101. In eachof the layer 101 and the layer 201, a circuit that can function byutilizing semiconductor characteristics is provided; a peripheralcircuit 110 is provided in the layer 101, and a memory cell array(Memory Cell Array) 210 is provided in the layer 201. Note that in thedrawings described in this specification and the like, the flow of mainsignals is indicated by an arrow or a line, and a power supply line andthe like are omitted in some cases.

The peripheral circuit 110 includes a row decoder 121, a word linedriver circuit 122, a column decoder 131, a bit line driver circuit 132,an output circuit 140, and a control logic circuit 160. Note that theperipheral circuit 110 has a function of a driver circuit and a controlcircuit for the memory cell array 210.

The peripheral circuit 110 is formed with transistors formed on asemiconductor substrate SUB. There is no particular limitation on thesemiconductor substrate SUB as long as a channel region of a transistorcan be formed thereover. For example, a single crystal siliconsubstrate, a single crystal germanium substrate, a compoundsemiconductor substrate (such as a SiC substrate or a GaN substrate), anSOI (Silicon on Insulator) substrate, or the like can be used.

As the SOI substrate, the following substrate may be used: an SIMOX(Separation by Implanted Oxygen) substrate which is formed in such amanner that after an oxygen ion is implanted into a mirror-polishedwafer, an oxide layer is formed at a certain depth from the surface anddefects generated in a surface layer are eliminated by high-temperatureannealing, or an SOI substrate formed by using a Smart-Cut method inwhich a semiconductor substrate is cleaved by utilizing growth of aminute void, which is formed by implantation of a hydrogen ion, bythermal treatment; an ELTRAN method (a registered trademark: EpitaxialLayer Transfer). A transistor formed using a single crystal substratecontains a single crystal semiconductor in a channel formation region.

In this embodiment, a case in which a single crystal silicon substrateis used as the semiconductor substrate SUB will be described. Atransistor formed on a single crystal silicon substrate is referred toas a Si transistor. The peripheral circuit 110 formed using Sitransistors can operate at high speed.

The memory cell array 210 includes a plurality of memory cells 211, andthe memory cell 211 is formed using an OS transistor. The OS transistoris a thin film transistor, and thus, the memory cell array 210 can bestacked over the semiconductor substrate SUB.

Here, an oxide semiconductor has a bandgap of 2.5 eV or larger,preferably 3.0 eV or larger; thus, an OS transistor has a low leakagecurrent due to thermal excitation and also has extremely low off-statecurrent. Note that off-state current refers to current that flowsbetween a source and a drain when a transistor is off.

A metal oxide used in a channel formation region of the OS transistor ispreferably an oxide semiconductor containing at least one of indium (In)and zinc (Zn). Typical examples of such an oxide semiconductor includean In-M-Zn oxide (an element M is Al, Ga, Y, or Sn, for example).Reducing both impurities serving as electron donors, such as moisture orhydrogen, and oxygen vacancies can make an oxide semiconductor i-type(intrinsic) or substantially i-type. Such an oxide semiconductor can bereferred to as a highly purified oxide semiconductor. Note that thedetails of an OS transistor will be described in Embodiment 4.

The memory cell 211 has a function of storing data by accumulating andretaining charge. The memory cell 211 may have a function of storingbinary (high level or low level) data or may have a function of storingdata of four or more levels. The memory cell 211 may have a function ofstoring analog data.

An OS transistor has an extremely low off-state current and thus issuitably used as a transistor included in the memory cell 211. Anoff-state current per micrometer of channel width of an OS transistorcan be, for example, lower than or equal to 100 zA/μm, lower than orequal to 10 zA/μm, lower than or equal to 1 zA/μm, or lower than orequal to 10 yA/μm. The use of an OS transistor in the memory cell 211enables data stored in the memory cell 211 to be retained for a longtime.

Since off-state current of the OS transistor is not easily increasedeven at high temperatures, data stored in the memory cell 211 is lesslikely to be lost even at high temperatures caused by heat generation bythe peripheral circuit 110. The use of an OS transistor can increase thereliability of the memory device 100.

FIG. 2 shows a relation between Vgs and Ids of the OS transistor. FIG. 2is a schematic view showing a relation between a voltage of a gate withrespect to a source, Vgs, and current that flows between the source anda drain, Ids, in the OS transistor when a constant voltage is appliedbetween the source and the drain.

As shown in FIG. 2 , the OS transistor has properties in that thethreshold voltage negatively shifts as temperature becomes higher andthat current flowing between the source and the drain when thetransistor is on (also referred to as on-state current) is increased. Inother words, the memory cell 211 can operate at high speed under hightemperatures.

As illustrated in FIG. 1 , in the memory cell array 210, the memorycells 211 are arranged in a matrix, and each of the memory cells 211 isconnected to a wiring WL and a wiring BL. The memory cell 211 isselected by a potential applied to the wiring WL, and data is written tothe selected memory cell 211 through the wiring BL. Alternatively, thememory cell 211 is selected by a potential applied to the wiring WL, anddata is read from the selected memory cell 211 through the wiring BL.

In other words, the wiring WL has a function of a word line of thememory cell 211, and the wiring BL has a function of a bit line of thememory cell 211. Although not illustrated in FIG. 1 , the wiring WLincludes a word line wwl and a word line rwl, and the wiring BL includesa bit line wbl and a bit line rbl (see FIG. 3 ).

<Block Diagram of Memory Device>

FIG. 3 is a block diagram illustrating a structure example of the memorydevice 100.

The memory device 100 includes the peripheral circuit 110 and the memorycell array 210. The peripheral circuit 110 includes the row decoder 121,the word line driver circuit 122, the column decoder 131, the bit linedriver circuit 132, the output circuit 140, and the control logiccircuit 160. The memory cell array 210 includes the memory cell 211, theword line wwl, the word line rwl, the bit line wbl, and the bit linerbl.

A potential Vss, a potential Vdd, a potential Vdh, and a referencepotential Vref are input to the memory device 100. The potential Vdh isa high power supply potential of the word line wwl.

A clock signal CLK, a chip enable signal CE, a global write enablesignal GW, a byte write enable signal BW, an address signal ADDR, and adata signal WDATA are input to the memory device 100, and the memorydevice 100 outputs a data signal RDATA. Note that these signals aredigital signals represented by a high level or a low level (representedby High or Low, H or L, 1 or 0, or the like in some cases).

Here, each of the byte write enable signal BW, the address signal ADDR,the data signal WDATA, and the data signal RDATA is a signal having aplurality of bits.

In this specification and the like, as for a signal having a pluralityof bits, for example, in the case where the byte write enable signal BWhas four bits, the signal is represented by the byte write enable signalBW[3:0]. This means that the byte write enable signal includes BW[0] toBW[3]. In the case where one bit needs to be specified, for example, thesignal is represented by the byte write enable signal BW[0]. When thesignal is represented by the byte write enable signal BW, it meanshaving a given bit.

For example, the byte write enable signal BW can have four bits, andeach of the data signal WDATA and the data signal RDATA can have 32bits. In other words, the byte write enable signal BW, the data signalWDATA, and the data signal RDATA are represented by the byte writeenable signal BW[3:0], a data signal WDATA[31:0], and a data signalRDATA[31:0], respectively.

Note that in the memory device 100, each of the above circuits, signals,and potentials can be appropriately selected as needed. Alternatively,another circuit, another signal, or another potential may be added.

The control logic circuit 160 processes the chip enable signal CE andthe global write enable signal GW and generates control signals for therow decoder 121 and the column decoder 131. For example, in the casewhere the chip enable signal CE is at a high level and the global writeenable signal GW is at a low level, the row decoder 121 and the columndecoder 131 perform reading operation; in the case where the chip enablesignal CE is at a high level and the global write enable signal GW is ata high level, the row decoder 121 and the column decoder 131 performwriting operation; and in the case where the chip enable signal CE is ata low level, the row decoder 121 and the column decoder 131 can performstandby operation regardless of whether the global write enable signalGW is at a high level or a low level. Signals processed by the controllogic circuit 160 are not limited to them, and other signals may beinput as necessary.

Furthermore, the control logic circuit 160 processes the byte writeenable signal BW[3:0] to control writing operation. Specifically, in thecase where the byte write enable signal BW[0] is at a high level, therow decoder 121 and the column decoder 131 perform writing operation ofthe data signal WDATA[7:0]. Similarly, in the case where the byte writeenable signal BW[1] is at a high level, writing operation of the datasignal WDATA[15:8] is performed; in the case where the byte write enablesignal BW[2] is at a high level, writing operation of the data signalWDATA[23:16] is performed; and in the case where the byte write enablesignal BW[3] is at a high level, writing operation of the data signalWDATA[31:24] is performed.

An address signal ADDR is input to the row decoder 121 and the columndecoder 131 in addition to the above control signals generated by thecontrol logic circuit 160.

The row decoder 121 decodes the address signal ADDR and generatescontrol signals for the word line driver circuit 122. The word linedriver circuit 122 has a function of driving the word line wwl and theword line rwl. The word line driver circuit 122 selects the word linewwl or the word line rwl of a row which is an access target, on thebasis of a control signal of the row decoder 121.

In the case where the memory cell array 210 is divided into a pluralityof blocks, a predecoder 123 may be provided. The predecoder 123 has afunction of decoding the address signal ADDR and determining a block tobe accessed.

The column decoder 131 and the bit line driver circuit 132 have afunction of writing data input by the data signal WDATA to the memorycell array 210, a function of reading data from the memory cell array210, a function of amplifying the read data and outputting the amplifieddata to the output circuit 140, and the like.

The output circuit 140 outputs, as the data signal RDATA, data read fromthe memory cell array 210 by the column decoder 131 and the bit linedriver circuit 132.

In the example of FIG. 3 , the bit line driver circuit 132 includes aprecharge circuit 133, a sense amplifier circuit 134, an output MUX(multiplexer) circuit 135, and a write driver circuit 136. Note that theprecharge circuit 133, the sense amplifier circuit 134, the output MUXcircuit 135, and the write driver circuit 136 will be described later.

<Memory Cell Array>

FIG. 4(A) illustrates a structure example of the memory cell array 210.The memory cell array 210 includes m×n memory cells 211 in total; mmemory cells (m is an integer greater than or equal to 1) in a columnand n memory cells (n is an integer greater than or equal to 1) in arow, and the memory cells 211 are arranged in a matrix.

The addresses of the memory cells 211 are also illustrated in FIG. 4(A),and [1, 1], [i, 1], [m, 1], [1, j], [i, j], [m, j], [1, n], [i, n], and[m, n], (i is an integer greater than or equal to 1 and less than orequal to m, and j is an integer greater than or equal to 1 and less thanor equal to n) are the addresses of the memory cells 211. For example,the memory cell 211 represented by [i, j] is the memory cell 211 in thei-th row and the j-th column.

Furthermore, the memory cell array 210 includes n bit lines wbl (wbl(1)to wbl(n)), n bit lines rbl (rbl(1) to rbl(n)), m word lines wwl (wwl(1)to wwl(m)), and m word lines rwl (rwl(1) to rwl(m)).

Each of the memory cells 211 is connected to the bit line wbl, the bitline rbl, the word line wwl, and the word line rwl. As illustrated inFIG. 4(A), the memory cell 211 whose address is [i, j] is electricallyconnected to the word line driver circuit 122 through the word linewwl(i) and the word line rwl(i) and is electrically connected to the bitline driver circuit 132 through the bit line wbl(j) and the bit linerbl(j).

<Memory Cell>

FIG. 4(B) is a circuit diagram illustrating a structure example of thememory cell 211.

The memory cell 211 includes a transistor M11 and a transistor M12. Oneof a source and a drain of the transistor M11 is electrically connectedto a gate of the transistor M12, the other of the source and the drainof the transistor M11 is connected to the bit line wbl, and a gate ofthe transistor M11 is connected to the word line wwl. One of a sourceand a drain of the transistor M12 is connected to the bit line rbl, andthe other of the source and the drain of the transistor M12 is connectedto the word line rwl. Here, the gate of the transistor M12 is referredto as a node N11.

The memory cell 211 may further include a capacitor C11. FIG. 4(C)illustrates a structure example in the case where the memory cell 211includes the capacitor C11. A first terminal of the capacitor C11 iselectrically connected to the node N11, and a second terminal of thecapacitor C11 is connected to a wiring CAL. The wiring CAL functions asa wiring for applying a predetermined potential to the second terminalof the capacitor C11.

The bit line wbl functions as a write bit line, the bit line rblfunctions as a read bit line, the word line wwl functions as a writeword line, and the word line rwl functions as a read word line. Thetransistor M11 has a function of a switch for controlling conduction ornon-conduction between the node N11 and the bit line wbl.

Data writing is performed in such a manner that a high-level potentialis applied to the word line wwl to bring the transistor M11 into aconduction state, and thus the node N11 and the bit line wbl areelectrically connected. Specifically, when the transistor M11 is in aconduction state, a potential corresponding to data written to the bitline wbl is applied, and the potential is written to the node N11. Afterthat, a low-level potential is applied to the word line wwl to bring thetransistor M11 into a non-conduction state, whereby the potential of thenode N11 is retained.

Data reading is performed in such a manner that a predeterminedpotential is applied to the bit line rbl, and after that, the bit linerbl is brought into an electrically floating state, and a low-levelpotential is applied to the word line rwl. Hereinafter, applying apredetermined potential to the bit line rbl to bring the bit line rblinto a floating state is expressed as precharging the bit line rbl.

For example, by precharging the potential Vdd to the bit line rbl, thetransistor M12 has a potential difference between the source and thedrain, and the current flowing between the source and the drain of thetransistor M12 is determined depending on a potential retained at thenode N11. Thus, the potential retained at the node N11 can be read byreading a change in potential of the bit line rbl at the time when thebit line rbl is in a floating state.

A row where the memory cells 211 to which data is to be written arearranged is selected by the word line wwl to which a high-levelpotential is applied, and a row where the memory cells 211 from whichdata is to be read are arranged is selected by the word line rwl towhich a low-level potential is applied. In contrast, a row where thememory cells 211 to which data is not written are arranged can be in anon-selected state by applying a low-level potential to the word linewwl, and a row where the memory cells 211 from which data is not readare arranged can be in a non-selected state by applying, to the worldline rwl, the same potential as a potential precharged to the bit linerbl.

Here, transistors containing a metal oxide in their channel formationregions (OS transistors) can be used as the transistor M11 and thetransistor M12. For example, in the channel formation regions of thetransistor M11 and the transistor M12, a metal oxide containing any oneof an indium, an element M (the element M is one or more kinds selectedfrom aluminum, gallium, yttrium, copper, vanadium, beryllium, boron,titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum,cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and thelike), and zinc can be used. In particular, a metal oxide formed ofindium, gallium, and zinc is preferable.

Since the OS transistor has extremely low off-state current, a potentialwritten to the node N11 can be retained for a long time when the OStransistor is used as the transistor M11. In other words, data writtento the memory cell 211 can be retained for a long time.

A transistor used as the transistor M12 is not particularly limited.Although an OS transistor, a Si transistor, or a different transistormay be used as the transistor M12, it is preferable that OS transistorsbe used as the transistor M12 and the transistor M11 in which case thememory cell array 210 can be stacked over the peripheral circuit 110.

The OS transistor has extremely low off-state current; thus, the memorycell 211 can have a structure not including the capacitor C11. In thecase where the memory cell 211 does not include the capacitor C11, apotential written to the node N11 is retained by the gate capacitance ofthe transistor M12, or the like.

The memory cell 211 is a gain-cell memory cell composed of twotransistors or composed of two transistors and one capacitor. Again-cell memory cell can operate as a memory by amplifying accumulatedcharge by the closest transistor even when the capacitance ofaccumulated charge is small. The memory cell 211 is the above NOSRAM.

The memory cell 211 may include a transistor M13 and a transistor M14each including a back gate. FIG. 5(A) is a circuit diagram illustratinga structure example of a memory cell 212. The memory cell 212 includesthe transistor M13 and the transistor M14. The transistor M13 and thetransistor M14 each include a front gate and a back gate.

One of a source and a drain of the transistor M13 is electricallyconnected to the front gate and the back gate of the transistor M14, theother of the source and the drain of the transistor M13 is connected tothe bit line wbl, and the front gate and the back gate of the transistorM13 are connected to the word line wwl. One of a source and a drain ofthe transistor M14 is connected to the bit line rbl, and the other ofthe source and the drain of the transistor M14 is connected to the wordline rwl. Here, the front gate and the back gate of the transistor M14are referred to as a node N12.

When each of the transistor M13 and the transistor M14 includes a backgate, the on-state current can be increased. That is, the memory cell212 can operate at high speed.

FIG. 5(B) is a circuit diagram illustrating a structure example of amemory cell 213. The memory cell 213 includes the transistor M13 and thetransistor M14.

The one of the source and the drain of the transistor M13 iselectrically connected to the front gate of the transistor M14, theother of the source and the drain of the transistor M13 is connected tothe bit line wbl, and the front gate of the transistor M13 is connectedto the word line wwl. The one of the source and the drain of thetransistor M14 is connected to the bit line rbl, and the other of thesource and the drain of the transistor M14 is connected to the word linerwl. The back gates of the transistor M13 and the transistor M14 areconnected to a wiring VBG. The wiring VBG functions as a wiring forapplying a predetermined potential to the back gates of the transistorM13 and the transistor M14. Here, the front gate of the transistor M14is referred to as a node N13.

When a predetermined potential is applied to the back gates of thetransistor M13 and the transistor M14 through the wiring VBG, thethreshold voltages of the transistor M13 and the transistor M14 can beincreased or decreased. Specifically, the threshold voltages negativelyshift when a high potential is applied to the back gates of thetransistor M13 and the transistor M14, and the threshold voltagespositively shifts when a low potential is applied to the back gates ofthe transistor M13 and the transistor M14. By shifting the thresholdvoltages negatively, the on-state current of the transistors can beincreased, and the memory cell 213 can operate at high speed. Byshifting the threshold voltages positively, the off-state current of thetransistors can be decreased, and the memory cell 213 can retain datafor a long time.

Note that although the memory cell 213 illustrated in FIG. 5(B) has astructure in which the back gates of the transistor M13 and thetransistor M14 are connected to the wiring VBG, the back gate of thetransistor M13 and the back gate of the transistor M14 may be connectedto different wirings. For example, with a structure in which the backgate of the transistor M13 is connected to a wiring VBG1 and the backgate of the transistor M14 is connected to a wiring VBG2, the off-statecurrent of the transistor M13 can be decreased by applying a lowpotential to the wiring VBG1, and the on-state current of the transistorM14 can be increased by applying a high potential to the wiring VBG2.The transistor M13 and the transistor M14 can be transistors for desiredpurposes.

FIG. 5(C) is a circuit diagram illustrating a structure example of amemory cell 214. The memory cell 214 includes the transistor M13 and thetransistor M14, which are connected to the word line rwlb in addition tothe bit line wbl, the bit line rbl, the word line wwl, the word linerwl, and the wiring VBG.

The one of the source and the drain of the transistor M13 iselectrically connected to the front gate of the transistor M14, theother of the source and the drain of the transistor M13 is connected tothe bit line wbl, and the front gate of the transistor M13 is connectedto the word line wwl. The one of the source and the drain of thetransistor M14 is connected to the bit line rbl, and the other of thesource and the drain of the transistor M14 is connected to the word linerwl. The back gate of the transistor M14 is connected to the word linerwlb, and the back gate of the transistor M13 is connected to the wiringVBG. The wiring VBG functions as a wiring for applying a predeterminedpotential to the back gate of the transistor M13, and the front gate ofthe transistor M14 is referred to as a node N14.

The description of the memory cell 213 is referred to for the wiringVBG. The transistor M13 can be replaced with a transistor not includinga back gate.

The word line rwlb is driven by the word line driver circuit 122, likethe word line wwl and the word line rwl. The word line driver circuit122 can increase the on-state current of the transistor M14 in readingoperation by applying a high potential to the word line rwlb of a rowwhich is a reading target. In contrast, the off-state current of thetransistor M14 which is not subjected to reading operation can bedecreased by applying a low potential to the world line rwlb of a rowother than a row which is a reading target.

The memory cell 212, the memory cell 213, and the memory cell 214 mayinclude a capacitor C12, a capacitor C13, and a capacitor C14,respectively. FIG. 5(D) illustrates a structure example in the casewhere the memory cell 212 includes the capacitor C12, FIG. 5(E)illustrates a structure example in the case where the memory cell 213includes the capacitor C13, and FIG. 5(F) illustrates a structureexample in the case where the memory cell 214 includes the capacitorC14. Note that since they are similar to the structure example in thecase where the memory cell 211 includes the capacitor C11, thedescription of the memory cell 211 is referred to.

<Structure Example of Bit Line Driver Circuit>

In the bit line driver circuit 132, a circuit 137 illustrated in FIG. 6is provided for each column. FIG. 6 is a circuit diagram illustrating astructure example of the circuit 137. Note that in this example, thememory cell array 210 includes 128 memory cells 211 in one row (n=128).

The circuit 137 includes a transistor M21 to a transistor M26, a senseamplifier circuit 31, an AND circuit 32, an analog switch 33, and ananalog switch 34.

The circuit 137 operates in response to a signal SEN[3:0], a signalSEP[3:0], a signal PRE, a signal RSEL[3:0], a signal WSEL, a signalGRSEL[3:0], and a signal GWSEL[15:0]. Note that a 1-bit signal of any ofthe 4-bit signal SEN[3:0] is input to one circuit 137. The same appliesto the other signals having a plurality of bits (SEP[3:0] and the like).

The bit line driver circuit 132 writes data DIN[31:0] to the memory cellarray 210 and reads data DOUT[31:0] from the memory cell array 210. Onecircuit 137 has a function of writing 1-bit data of any of the 32-bitdata DIN[31:0] to the memory cell array 210 and reading 1-bit data ofany of the 32-bit data DOUT[31:0] from the memory cell array 210.

Note that the data DIN [31:0] and the data DOUT [31:0] are internalsignals and correspond to the data signal WDATA and the data signalRDATA, respectively.

<<Precharge Circuit>>

The transistor M21 forms the precharge circuit 133. The bit line rbl isprecharged to the potential Vdd by the transistor M21. The signal PRE isa precharge signal, and the conduction state of the transistor M21 iscontrolled by the signal PRE.

<Sense Amplifier Circuit>

The sense amplifier circuit 31 forms the sense amplifier circuit 134. Inreading operation, the sense amplifier circuit 31 determines whetherdata input to the bit line rbl is at a high level or a low level. Inaddition, the sense amplifier circuit 31 functions as a latch circuitthat temporarily retains the data DIN input from the write drivercircuit 136 in writing operation.

The sense amplifier circuit 31 illustrated in FIG. 6 is a latch senseamplifier. The sense amplifier circuit 31 includes two invertercircuits, and an input node of one of the inverter circuits is connectedto an output node of the other of the inverter circuits. When the inputnode of the one of the inverter circuits is a node NS and the outputnode is a node NSB, complementary data is retained in the node NS andthe node NSB.

The signal SEN and the signal SEP are each a sense amplifier enablesignal for activating the sense amplifier circuit 31, and the referencepotential Vref is a read judge potential. The sense amplifier circuit 31determines whether the potential of the node NSB at the time of theactivation is at high level or a low level on the basis of the referencepotential Vref.

The AND circuit 32 controls electrical continuity between the node NSand the bit line wbl. The analog switch 33 controls electricalcontinuity between the node NSB and the bit line rbl, and the analogswitch 34 controls electrical continuity between the node NS and awiring for supplying the reference potential Vref.

The signal WSEL is a write selection signal, which controls the ANDcircuit 32. The signal RSEL[3:0] is a read selection signal, whichcontrols the analog switch 33 and the analog switch 34.

<<Output MUX Circuit>>

The transistor M22 and the transistor M23 form the output MUX circuit135. The signal GRSEL[3:0] is a global read selection signal andcontrols the output MUX circuit 135. The output MUX circuit 135 has afunction of selecting, from 128 bit lines rbl, 32 bit lines rbl fromwhich data is to be read. The output MUX circuit 135 functions as amultiplexer of 128 input and 32 output.

The output MUX circuit 135 reads the data DOUT[31:0] from the senseamplifier circuit 134 and outputs the data to the output circuit 140.

<<Write Driver Circuit>>

The transistor M24 to the transistor M26 form the write driver circuit136. The signal GWSEL[15:0] is a global write selection signal andcontrols the write driver circuit 136. The write driver circuit 136 hasa function of writing the data DIN[31:0] to the sense amplifier circuit134.

The write driver circuit 136 has a function of selecting a column wherethe data DIN[31:0] is to be written. The write driver circuit 136 writesdata in byte units, half-word units, or word units in response to thesignal GWSEL[15:0].

The circuit 137 is electrically connected to the data DIN[k] (k is aninteger greater than or equal to 0 and less than or equal to 31) inevery four columns. In addition, the circuit 137 is electricallyconnected to the data DOUT[k] in every four columns.

<Operation Example of Memory Cell>

FIG. 7 is a timing chart showing an operation example of the memory cell211. In FIG. 7 , the relation between potentials of the word line wwl,the word line rwl, the bit line wbl, and the bit line rbl in writingoperation and reading operation of the memory cell 211 will bedescribed. Moreover, the word line rwlb to which the memory cell 214 isconnected will be described later.

In FIG. 7 , Period Twrite is a period during which writing operation isperformed, and Period Tread is a period during which reading operationis performed. A potential of each of the word line rwl, the bit linewbl, and the bit line rbl at high level is the potential Vdd, and apotential thereof at a low level is the potential Vss. A potential ofthe word line wwl at high level is the potential Vdh, and a potential ofthe word line wwl at low level is the potential Vss.

<<Write Operation>>

In Period Twrite, a potential Vdata corresponding to data to be writtenis applied to the bit line wbl. When the potential Vdh is applied to theword line wwl of a row where the memory cells 211 to which the data isto be written are arranged in a state where the potential Vdatacorresponding to the data to be written is applied to the bit line wbl,the transistor M11 is brought into a conduction state, and the potentialVdata corresponding to the data to be written is written to the nodeN11.

Furthermore, in Period Twrite, the potential Vdd is applied to the bitline rbl and the word line rwl.

<<Reading Operation>>

In Period Tread, the bit line rbl is precharged with the potential Vdd.When the potential Vss is applied to the word line rwl of a row wherethe memory cells 211 from which data is to be read are arranged in astate where the bit line rbl is in a floating state, in the case wherethe data written to the node N11 is at a high level, the transistor M12is brought into a conduction state, and the potential of the bit linerbl starts to be decreased.

When the potential of the bit line rbl is decreased by ΔV1 and becomeslower than the reference potential Vref, the sense amplifier circuit 31determines that the bit line rbl is at a low level.

In the case where the data written to the node N11 is at a low leveleven when the potential Vss is applied to the word line rwl of a rowwhere the memory cells 211 from which data is to be read are arranged ina state where the bit line rbl is in a floating state, the transistorM12 is not brought into a conduction state, and thus the potential ofthe bit line rbl is not changed. In this case, the sense amplifiercircuit 31 determines that the bit line rbl is at a high level.

In Period Tread, the potential Vss is applied to the bit line wbl andthe word line wwl.

As for the word line rwlb to which the memory cell 214 is connected, forexample, a potential of the word line rwlb at a high level can be thepotential Vdh, and a potential of the word line rwlb at a low level canbe the potential Vss.

In Period Twrite, the potential Vss is applied to the word line rwlb,and in Period Tread, the potential Vdh is applied to the word line rwlbof a row where the memory cells 214 from which data is to be read arearranged.

When the potential Vdh is applied to the word line rwlb, the on-statecurrent of the transistor M14 included in the memory cell 214 from whichdata is to be read can be increased. Furthermore, when the potential Vssis applied to the word line rwlb, the off-state current of thetransistor M14 can be reduced.

As described above, the memory device 100 includes a gain-cell memorycell formed using an n-channel transistor, and the high level and thelow level of the word line wwl, the word line rwl, the bit line wbl, andthe bit line rbl are represented by three kinds of potentials, thepotential Vss, the potential Vdd, and the potential Vdh. In other words,a potential lower than the low-level potential Vss applied to the bitline wbl and the bit line rbl is unnecessary, and thus the memory device100 can be operated with a small number of power sources. The cost of anelectronic device including the memory device 100 can be reduced.

Furthermore, when all the transistors included in the memory cell 211are OS transistors, the memory cell array 210 can be stacked over theperipheral circuit 110. Thus, the chip area of the memory device 100 canbe reduced.

Note that this embodiment can be implemented in combination with theother embodiments described in this specification as appropriate.

Embodiment 2

In this embodiment, an example in which the memory device described inthe above embodiment includes a serial peripheral interface (SPI) willbe described. The serial peripheral interface is one of serialinterfaces used for communication between semiconductor devices thatinput/output a digital signal and has a feature that the number ofterminals required for input/output of a signal can be small. Forexample, it is used for communication between a CPU (Central ProcessingUnit) and a memory device.

<Block Diagram of Memory Device>

FIG. 8 is a block diagram illustrating a structure example of a memorydevice 105. The memory device 105 includes a peripheral circuit 115 andthe memory cell array 210. As in the memory device 100 described in theabove embodiment, in the memory device 105, the peripheral circuit 115is formed using a Si transistor, the memory cell array 210 includes theplurality of memory cells 211, and the memory cells 211 are formed usingOS transistors.

The peripheral circuit 115 includes the row decoder 121, the word linedriver circuit 122, the column decoder 131, the bit line driver circuit132, a page buffer 138, a potential generation circuit 150, an SPIcontroller 161, and a status register 168. The memory cell array 210includes the memory cell 211, the word line wwl, the word line rwl, thebit line wbl, and the bit line rbl.

Note that the descriptions of the memory cell array 210, the row decoder121, the word line driver circuit 122, the column decoder 131, and thebit line driver circuit 132 are omitted because the descriptions aresimilar to those in the above embodiment.

The potential Vss and the potential Vdh are input to the memory device105. A clock signal SCLK, a chip select signal CS, a data input signalSI, a data output signal SO, a hold signal HOLD, and a write protectionsignal WP are input to the memory device 105.

The potential generation circuit 150 includes a regulator 151, aregulator 152, and a power switch 153. On the basis of the potential Vssand the potential Vdh input to the memory device 105, the regulator 151can generate the potential Vdd, the regulator 152 can generate thereference potential Vref, and the power switch 153 can control output ofthe potential Vdh.

The potential generation circuit 150 has a function of supplying thepotential Vdh, the potential Vdd, and the potential Vss to theperipheral circuit 115. For example, the potential Vdh can be set to 3.3V, the potential Vdd can be set to 1.2 V, and the potential Vss can beset to 0 V (GND).

In the case where the memory cell 211 is formed using a transistorincluding a back gate, the potential generation circuit 150 may have afunction of generating and supplying a potential to be applied to theback gate.

The SPI controller 161 includes a serial-parallel convertor 162, aninstruction decoder circuit 163, a page address generation circuit 164,a command generation circuit 165, a byte address generation circuit 166,and a parallel-serial converter 167.

The SPI controller 161 processes a signal input to the memory device 105and outputs the chip enable signal CE and the global write enable signalGW to the row decoder 121 and the column decoder 131.

For example, in the case where the chip enable signal CE is at a highlevel and the global write enable signal GW is at a low level, the rowdecoder 121 and the column decoder 131 perform reading operation; in thecase where the chip enable signal CE is at a high level and the globalwrite enable signal GW is at a high level, the row decoder 121 and thecolumn decoder 131 perform writing operation; and in the case where thechip enable signal CE is at a low level, the row decoder 121 and thecolumn decoder 131 can perform standby operation regardless of whetherthe global write enable signal GW is at a high level or a low level.

The SPI controller 161 processes a signal input to the memory device 105and outputs the write data signal WDATA to the page buffer 138. The pagebuffer 138 outputs, to the SPI controller 161, the read data signalRDATA read from the memory cell array 210.

Furthermore, the page address generation circuit 164 outputs a rowaddress signal RADR to the row decoder 121, and the byte addressgeneration circuit 166 outputs a column address signal CADR to thecolumn decoder 131. The memory cell 211 subjected to reading or writingis determined by the row address signal RADR and the column addresssignal CADR.

The page buffer 138 has a function of temporarily storing a data signalto be read or written, and the status register 168 is a memory thatstores an operation mode of the SPI controller 161.

When the storage capacity of the page buffer 138 is 256 bytes (2048bits), and the memory cell array 210 includes 2048 memory cells 211 inone row and 1024 memory cells 211 in one column, for example, the memorydevice 105 can have a capacity of 256 Kbyte.

The write protection signal WP is a signal that prevents writing to thestatus register 168, and the hold signal HOLD is a signal thattemporarily stops the operation of the memory device 105.

Note that a signal processed by the SPI controller 161 is not limited tothe above, and a different signal may be input or output as necessary.

This embodiment can be implemented in combination with the otherembodiments described in this specification as appropriate.

Embodiment 3

Structure examples of the Si transistor that is applicable to theperipheral circuit 110 and the OS transistor that is applicable to thememory cell 211 described in the above embodiment will be described inthis embodiment. Note that the Si transistor and the OS transistor arecollectively referred to as a semiconductor device in this embodiment.

<Structure Example of Semiconductor Device>

A semiconductor device illustrated in FIG. 9 includes a transistor 300,a transistor 500, and a capacitor 600. FIG. 10(A) is a cross-sectionalview of the transistor 500 in the channel length direction, FIG. 10(B)is a cross-sectional view of the transistor 500 in the channel widthdirection, and FIG. 10(C) is a cross-sectional view of the transistor300 in the channel width direction.

The transistor 500 is a transistor containing a metal oxide in itschannel formation region (OS transistor). Since the off-state current ofthe transistor 500 is low, a semiconductor device using such atransistor can retain stored data for a long time. Alternatively, thecapacitance of accumulated charge can be small.

The semiconductor device described in this embodiment includes thetransistor 300, the transistor 500, and the capacitor 600 as illustratedin FIG. 9 . The transistor 500 is provided above the transistor 300, andthe capacitor 600 is provided above the transistor 300 and thetransistor 500.

The transistor 300 is provided on a substrate 311 and includes aconductor 316, an insulator 315, a semiconductor region 313 that is apart of the substrate 311, and a low-resistance region 314 a and alow-resistance region 314 b functioning as a source region and a drainregion.

As illustrated in FIG. 10(C), in the transistor 300, the top surface anda side surface in the channel width direction of the semiconductorregion 313 are covered with the conductor 316 with the insulator 315therebetween. The effective channel width is increased in the Fin-typetransistor 300, whereby the on-state characteristics of the transistor300 can be improved. In addition, since contribution of an electricfield of the gate electrode can be increased, the off-statecharacteristics of the transistor 300 can be improved.

Note that the transistor 300 can be a p-channel transistor or ann-channel transistor.

It is preferable that a region of the semiconductor region 313 where achannel is formed, a region in the vicinity thereof, the low-resistanceregion 314 a and the low-resistance region 314 b functioning as thesource region and the drain region, and the like contain a semiconductorsuch as a silicon-based semiconductor, further preferably single crystalsilicon. Alternatively, these regions may be formed using a materialcontaining Ge (germanium), SiGe (silicon germanium), GaAs (galliumarsenide), GaAlAs (gallium aluminum arsenide), or the like. A structuremay be employed in which silicon whose effective mass is controlled byapplying stress to the crystal lattice and thereby changing the latticespacing is used. Alternatively, the transistor 300 may be an HEMT (HighElectron Mobility Transistor) with GaAs and GaAlAs, or the like.

The low-resistance region 314 a and the low-resistance region 314 bcontain an element that imparts n-type conductivity, such as arsenic orphosphorus, or an element that imparts p-type conductivity, such asboron, in addition to the semiconductor material used for thesemiconductor region 313.

The conductor 316 functioning as a gate electrode can be formed using asemiconductor material such as silicon containing an element thatimparts n-type conductivity, such as arsenic or phosphorus, or anelement that imparts p-type conductivity, such as boron, or using aconductive material such as a metal material, an alloy material, or ametal oxide material.

Note that since the work function of a conductor depends on a materialof the conductor, Vth of the transistor can be adjusted by changing thematerial of the conductor. Specifically, it is preferable to use amaterial such as titanium nitride or tantalum nitride for the conductor.Moreover, in order to ensure both conductivity and embeddability, it ispreferable to use stacked layers of metal materials such as tungsten andaluminum for the conductor, and it is particularly preferable to usetungsten in terms of heat resistance.

Note that the transistor 300 illustrated in FIG. 9 is just an exampleand the structure is not limited thereto; an appropriate transistor canbe used in accordance with a circuit structure or a driving method.

An insulator 320, an insulator 322, an insulator 324, and an insulator326 are stacked in this order to cover the transistor 300.

The insulator 320, the insulator 322, the insulator 324, and theinsulator 326 can be formed using, for example, silicon oxide, siliconoxynitride, silicon nitride oxide, silicon nitride, aluminum oxide,aluminum oxynitride, aluminum nitride oxide, or aluminum nitride.

The insulator 322 may have a function of a planarization film forplanarizing a level difference caused by the transistor 300 or the likeprovided below the insulator 322. For example, the top surface of theinsulator 322 may be planarized by planarization treatment using achemical mechanical polishing (CMP) method or the like to improveplanarity.

The insulator 324 is preferably formed using a film having a barrierproperty that prevents diffusion of hydrogen or impurities from thesubstrate 311, the transistor 300, or the like into a region where thetransistor 500 is provided.

For the film having a barrier property against hydrogen, silicon nitrideformed by a CVD method can be used, for example. Here, the diffusion ofhydrogen to a semiconductor element including an oxide semiconductor,such as the transistor 500, degrades the characteristics of thesemiconductor element in some cases. Therefore, a film that inhibitshydrogen diffusion is preferably provided between the transistor 500 andthe transistor 300. The film that inhibits hydrogen diffusion isspecifically a film from which a small amount of hydrogen is released.

The amount of released hydrogen can be measured by thermal desorptionspectroscopy (TDS), for example. The amount of hydrogen released fromthe insulator 324 that is converted into hydrogen atoms per area of theinsulator 324 is less than or equal to 10×10¹⁵ atoms/cm², preferablyless than or equal to 5×10¹⁵ atoms/cm², in the TDS analysis in afilm-surface temperature range of 50° C. to 500° C., for example.

Note that the permittivity of the insulator 326 is preferably lower thanthat of the insulator 324. For example, the dielectric constant of theinsulator 326 is preferably lower than 4, further preferably lower than3. The dielectric constant of the insulator 326 is, for example,preferably 0.7 times or less, further preferably 0.6 times or less thedielectric constant of the insulator 324. When a material with a lowpermittivity is used for an interlayer film, the parasitic capacitancegenerated between wirings can be reduced.

A conductor 328, a conductor 330, and the like that are connected to thecapacitor 600 or the transistor 500 are embedded in the insulator 320,the insulator 322, the insulator 324, and the insulator 326. Note thatthe conductor 328 and the conductor 330 function as a plug or a wiring.A plurality of conductors functioning as plugs or wirings arecollectively denoted by the same reference numeral in some cases.Furthermore, in this specification and the like, a wiring and a plugconnected to the wiring may be a single component. That is, there arecases where part of a conductor functions as a wiring and another partof the conductor functions as a plug.

As a material for each of plugs and wirings (the conductor 328, theconductor 330, and the like), a single layer or stacked layers of aconductive material such as a metal material, an alloy material, a metalnitride material, or a metal oxide material can be used. It ispreferable to use a high-melting-point material that has both heatresistance and conductivity, such as tungsten or molybdenum, and it ispreferable to use tungsten. Alternatively, it is preferable to use alow-resistance conductive material such as aluminum or copper. The useof a low-resistance conductive material can reduce wiring resistance.

A wiring layer may be provided over the insulator 326 and the conductor330. For example, in FIG. 9 , an insulator 350, an insulator 352, and aninsulator 354 are provided to be stacked in this order. Furthermore, aconductor 356 is formed in the insulator 350, the insulator 352, and theinsulator 354. The conductor 356 has a function of a plug or a wiringthat is connected to the transistor 300. Note that the conductor 356 canbe provided using a material similar to those for the conductor 328 andthe conductor 330.

For example, like the insulator 324, the insulator 350 is preferablyformed using an insulator having a barrier property against hydrogen.Furthermore, the conductor 356 preferably contains a conductor having abarrier property against hydrogen. In particular, the conductor having abarrier property against hydrogen is formed in an opening of theinsulator 350 having a barrier property against hydrogen. With thisstructure, the transistor 300 and the transistor 500 can be separated bya barrier layer, so that the diffusion of hydrogen from the transistor300 into the transistor 500 can be inhibited.

Note that for the conductor having a barrier property against hydrogen,tantalum nitride is preferably used, for example. The use of a stackincluding tantalum nitride and tungsten having high conductivity caninhibit the diffusion of hydrogen from the transistor 300 while theconductivity of a wiring is kept. In that case, the tantalum nitridelayer having a barrier property against hydrogen is preferably incontact with the insulator 350 having a barrier property againsthydrogen.

A wiring layer may be provided over the insulator 354 and the conductor356. For example, in FIG. 9 , an insulator 360, an insulator 362, and aninsulator 364 are provided to be stacked in this order. Furthermore, aconductor 366 is formed in the insulator 360, the insulator 362, and theinsulator 364. The conductor 366 has a function of a plug or a wiring.Note that the conductor 366 can be provided using a material similar tothose for the conductor 328 and the conductor 330.

For example, like the insulator 324, the insulator 360 is preferablyformed using an insulator having a barrier property against hydrogen.Furthermore, the conductor 366 preferably contains a conductor having abarrier property against hydrogen. In particular, the conductor having abarrier property against hydrogen is formed in an opening of theinsulator 360 having a barrier property against hydrogen. With thisstructure, the transistor 300 and the transistor 500 can be separated bya barrier layer, so that the diffusion of hydrogen from the transistor300 into the transistor 500 can be inhibited.

A wiring layer may be provided over the insulator 364 and the conductor366. For example, in FIG. 9 , an insulator 370, an insulator 372, and aninsulator 374 are provided to be stacked in this order. Furthermore, aconductor 376 is formed in the insulator 370, the insulator 372, and theinsulator 374. The conductor 376 has a function of a plug or a wiring.Note that the conductor 376 can be provided using a material similar tothose for the conductor 328 and the conductor 330.

For example, like the insulator 324, the insulator 370 is preferablyformed using an insulator having a barrier property against hydrogen.Furthermore, the conductor 376 preferably contains a conductor having abarrier property against hydrogen. In particular, the conductor having abarrier property against hydrogen is formed in an opening of theinsulator 370 having a barrier property against hydrogen. With thisstructure, the transistor 300 and the transistor 500 can be separated bya barrier layer, so that the diffusion of hydrogen from the transistor300 into the transistor 500 can be inhibited.

A wiring layer may be provided over the insulator 374 and the conductor376. For example, in FIG. 9 , an insulator 380, an insulator 382, and aninsulator 384 are provided to be stacked in this order. Furthermore, aconductor 386 is formed in the insulator 380, the insulator 382, and theinsulator 384. The conductor 386 has a function of a plug or a wiring.Note that the conductor 386 can be provided using a material similar tothose for the conductor 328 and the conductor 330.

For example, like the insulator 324, the insulator 380 is preferablyformed using an insulator having a barrier property against hydrogen.Furthermore, the conductor 386 preferably contains a conductor having abarrier property against hydrogen. In particular, the conductor having abarrier property against hydrogen is formed in an opening of theinsulator 380 having a barrier property against hydrogen. With thisstructure, the transistor 300 and the transistor 500 can be separated bya barrier layer, so that the diffusion of hydrogen from the transistor300 into the transistor 500 can be inhibited.

Although the wiring layer including the conductor 356, the wiring layerincluding the conductor 366, the wiring layer including the conductor376, and the wiring layer including the conductor 386 are describedabove, the semiconductor device of this embodiment is not limitedthereto. Three or less wiring layers that are similar to the wiringlayer including the conductor 356 may be provided, or five or morewiring layers that are similar to the wiring layer including theconductor 356 may be provided.

An insulator 510, an insulator 512, an insulator 514, and an insulator516 are provided to be stacked in this order over the insulator 384. Asubstance having a barrier property against oxygen or hydrogen ispreferably used for any of the insulator 510, the insulator 512, theinsulator 514, and the insulator 516.

For example, the insulator 510 and the insulator 514 are preferablyformed using a film having a barrier property that prevents diffusion ofhydrogen or impurities from the substrate 311, the region where thetransistor 300 is provided, or the like into the region where thetransistor 500 is provided. Therefore, a material similar to that forthe insulator 324 can be used.

For the film having a barrier property against hydrogen, silicon nitrideformed by a CVD method can be used, for example. Here, the diffusion ofhydrogen to a semiconductor element including an oxide semiconductor,such as the transistor 500, degrades the characteristics of thesemiconductor element in some cases. Therefore, a film that inhibitshydrogen diffusion is preferably provided between the transistor 500 andthe transistor 300. The film that inhibits hydrogen diffusion isspecifically a film from which a small amount of hydrogen is released.

For the film having a barrier property against hydrogen used as theinsulator 510 and the insulator 514, for example, a metal oxide such asaluminum oxide, hafnium oxide, or tantalum oxide is preferably used.

In particular, aluminum oxide has a high blocking effect that inhibitsthe passage of both oxygen and impurities such as hydrogen and moisturewhich are factors of a change in electrical characteristics of thetransistor. Accordingly, aluminum oxide can prevent the entry ofimpurities such as hydrogen and moisture into the transistor 500 in thefabrication process and after the fabrication of the transistor. Inaddition, release of oxygen from the oxide included in the transistor500 can be inhibited. Therefore, aluminum oxide is suitably used for aprotective film of the transistor 500.

The insulator 512 and the insulator 516 can be formed using a materialsimilar to that for the insulator 320, for example. When a material witha relatively low permittivity is used for an interlayer film, theparasitic capacitance between wirings can be reduced. Silicon oxidefilms, silicon oxynitride films, or the like can be used as theinsulator 512 and the insulator 516, for example.

A conductor 518 and the like are embedded in the insulator 510, theinsulator 512, the insulator 514, and the insulator 516. Note that theconductor 518 functions as a plug or a wiring that is connected to thecapacitor 600 or the transistor 300. The conductor 518 can be providedusing a material similar to those for the conductor 328 and theconductor 330.

In particular, the conductor 518 in a region in contact with theinsulator 510 and the insulator 514 is preferably a conductor having abarrier property against oxygen, hydrogen, and water. With thisstructure, the transistor 300 and the transistor 500 can be separated bythe layer having a barrier property against oxygen, hydrogen, and water;thus, the diffusion of hydrogen from the transistor 300 into thetransistor 500 can be inhibited.

The transistor 500 is provided above the insulator 516.

As illustrated in FIGS. 10(A) and 10(B), the transistor 500 includes aninsulator 520 positioned over the insulator 516; an insulator 522positioned over the insulator 520; an insulator 524 positioned over theinsulator 522; an oxide 530 a positioned over the insulator 524; anoxide 530 b positioned over the oxide 530 a; a conductor 542 a and aconductor 542 b positioned apart from each other over the oxide 530 b;an insulator 580 that is positioned over the conductor 542 a and theconductor 542 b and is provided with an opening formed to overlap with aregion between the conductor 542 a and the conductor 542 b; a conductor560 positioned in the opening; an insulator 550 positioned between theconductor 560 and the oxide 530 b, the conductor 542 a, the conductor542 b, and the insulator 580; and an oxide 530 c positioned between theinsulator 550 and the oxide 530 b, the conductor 542 a, the conductor542 b, and the insulator 580.

As illustrated in FIGS. 10(A) and 10(B), an insulator 544 is preferablypositioned between the insulator 580 and the oxide 530 a, the oxide 530b, the conductor 542 a, and the conductor 542 b. In addition, asillustrated in FIGS. 10(A) and 10(B), the conductor 560 preferablyincludes a conductor 560 a provided inside the insulator 550 and aconductor 560 b embedded inside the conductor 560 a. Moreover, asillustrated in FIGS. 10(A) and 10(B), an insulator 574 is preferablypositioned over the insulator 580, the conductor 560, and the insulator550.

Hereinafter, the oxide 530 a, the oxide 530 b, and the oxide 530 c maybe collectively referred to as an oxide 530. The conductor 542 a and theconductor 542 b may be collectively referred to as a conductor 542.

The transistor 500 has a structure in which three layers of the oxide530 a, the oxide 530 b, and the oxide 530 c are stacked in the regionwhere the channel is formed and its vicinity; however, the presentinvention is not limited thereto. For example, a single layer of theoxide 530 b, a two-layer structure of the oxide 530 b and the oxide 530a, a two-layer structure of the oxide 530 b and the oxide 530 c, or astacked-layer structure of four or more layers may be provided. Althoughthe conductor 560 is shown to have a stacked-layer structure of twolayers in the transistor 500, the present invention is not limitedthereto. For example, the conductor 560 may have a single-layerstructure or a stacked-layer structure of three or more layers. Notethat the transistor 500 illustrated in FIG. 9 and FIGS. 10(A) and 10(B)is an example, and the structure is not limited thereto; an appropriatetransistor can be used in accordance with a circuit structure or adriving method.

Here, the conductor 560 functions as a gate electrode of the transistor,and the conductor 542 a and the conductor 542 b function as a sourceelectrode and a drain electrode. As described above, the conductor 560is formed to be embedded in the opening of the insulator 580 and theregion between the conductor 542 a and the conductor 542 b. Thepositions of the conductor 560, the conductor 542 a, and the conductor542 b are selected in a self-aligned manner with respect to the openingof the insulator 580. That is, in the transistor 500, the gate electrodecan be positioned between the source electrode and the drain electrodein a self-aligned manner. Therefore, the conductor 560 can be formedwithout an alignment margin, resulting in a reduction in the areaoccupied by the transistor 500. Accordingly, miniaturization and highintegration of the semiconductor device can be achieved.

In addition, since the conductor 560 is formed in the region between theconductor 542 a and the conductor 542 b in a self-aligned manner, theconductor 560 does not have a region overlapping the conductor 542 a orthe conductor 542 b. Thus, parasitic capacitance formed between theconductor 560 and each of the conductor 542 a and the conductor 542 bcan be reduced. As a result, the transistor 500 can have improvedswitching speed and excellent frequency characteristics.

The insulator 550 has a function of a gate insulating film.

Here, as the insulator 524 in contact with the oxide 530, an insulatorthat contains oxygen more than oxygen in the stoichiometric compositionis preferably used. That is, an excess-oxygen region is preferablyformed in the insulator 524. When such an insulator containing excessoxygen is provided in contact with the oxide 530, oxygen vacancies inthe oxide 530 can be reduced and the reliability of the transistor 500can be improved.

As the insulator including an excess-oxygen region, specifically, anoxide material that releases part of oxygen by heating is preferablyused. An oxide that releases oxygen by heating is an oxide film in whichthe amount of released oxygen converted into oxygen atoms is greaterthan or equal to 1.0×10¹⁸ atoms/cm³, preferably greater than or equal to1.0×10¹⁹ atoms/cm³, further preferably greater than or equal to 2.0×10¹⁹atoms/cm³ or greater than or equal to 3.0×10²⁰ atoms/cm³ in TDSanalysis. Note that the temperature of the film surface in the TDSanalysis is preferably higher than or equal to 100° C. and lower than orequal to 700° C., or higher than or equal to 100° C. and lower than orequal to 400° C.

In the case where the insulator 524 includes an excess-oxygen region, itis preferred that the insulator 522 have a function of inhibitingdiffusion of oxygen (e.g., an oxygen atom, an oxygen molecule, or thelike) (the oxygen is less likely to pass).

When the insulator 522 has a function of inhibiting diffusion of oxygenor impurities, oxygen contained in the oxide 530 is not diffused to theinsulator 520 side, which is preferable.

For example, the insulator 522 is preferably formed using a single layeror stacked layers of an insulator containing what is called a high-kmaterial such as aluminum oxide, hafnium oxide, tantalum oxide,zirconium oxide, lead zirconate titanate (PZT), strontium titanate(SrTiO₃), or (Ba,Sr)TiO₃ (BST). With miniaturization and highintegration of transistors, a problem such as leakage current may arisebecause of a thinner gate insulating film. When a high-k material isused for an insulator functioning as the gate insulating film, a gatepotential during operation of the transistor can be reduced while thephysical thickness is maintained.

It is particularly preferable to use an insulator containing an oxide ofone or both of aluminum and hafnium, which is an insulating materialhaving a function of inhibiting diffusion of impurities, oxygen, and thelike (the oxygen is less likely to pass). As the insulator containing anoxide of one or both of aluminum and hafnium, aluminum oxide, hafniumoxide, an oxide containing aluminum and hafnium (hafnium aluminate), orthe like is preferably used. In the case where the insulator 522 isformed using such a material, the insulator 522 functions as a layerthat inhibits release of oxygen from the oxide 530 and entry ofimpurities such as hydrogen from the periphery of the transistor 500into the oxide 530.

Alternatively, aluminum oxide, bismuth oxide, germanium oxide, niobiumoxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, orzirconium oxide may be added to these insulators, for example.Alternatively, these insulators may be subjected to nitriding treatment.Silicon oxide, silicon oxynitride, or silicon nitride may be stackedover the insulator.

It is preferable that the insulator 520 be thermally stable. Forexample, silicon oxide and silicon oxynitride, which have thermalstability, are preferable. Furthermore, when an insulator which is ahigh-k material is combined with silicon oxide or silicon oxynitride,the insulator 520 having a stacked-layer structure that has thermalstability and a high dielectric constant can be obtained.

Note that the insulator 520, the insulator 522, and the insulator 524may each have a stacked-layer structure of two or more layers. In thatcase, without limitation to a stacked-layer structure formed of the samematerial, a stacked-layer structure formed of different materials may beemployed.

In the transistor 500, a metal oxide functioning as an oxidesemiconductor is preferably used as the oxide 530 including a channelformation region. For example, as the oxide 530, a metal oxide such asan In-M-Zn oxide (the element M is one or more kinds selected fromaluminum, gallium, yttrium, copper, vanadium, beryllium, boron,titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum,cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and the like)is preferably used. Furthermore, as the oxide 530, an In—Ga oxide or anIn—Zn oxide may be used.

The metal oxide functioning as the channel formation region in the oxide530 has a band gap of preferably 2 eV or higher, further preferably 2.5eV or higher. With the use of a metal oxide having such a wide band gap,the off-state current of the transistor can be reduced.

When the oxide 530 includes the oxide 530 a under the oxide 530 b, it ispossible to inhibit diffusion of impurities into the oxide 530 b fromthe components formed below the oxide 530 a. Moreover, including theoxide 530 c over the oxide 530 b makes it possible to inhibit diffusionof impurities into the oxide 530 b from the components formed above theoxide 530 c.

Note that the oxide 530 preferably has a stacked-layer structure ofoxides that differ in the atomic ratio of metal atoms. Specifically, theatomic ratio of the element M to the constituent elements in the metaloxide used for the oxide 530 a is preferably greater than the atomicratio of the element M to the constituent elements in the metal oxideused for the oxide 530 b. Moreover, the atomic ratio of the element M toIn in the metal oxide used for the oxide 530 a is preferably greaterthan the atomic ratio of the element M to In in the metal oxide used forthe oxide 530 b. Furthermore, the atomic ratio of In to the element M inthe metal oxide used for the oxide 530 b is preferably greater than theatomic ratio of In to the element M in the metal oxide used for theoxide 530 a. A metal oxide that can be used for the oxide 530 a or theoxide 530 b can be used for the oxide 530 c.

The energy of the conduction band minimum of each of the oxide 530 a andthe oxide 530 c is preferably higher than the energy of the conductionband minimum of the oxide 530 b. In other words, the electron affinityof each of the oxide 530 a and the oxide 530 c is preferably smallerthan the electron affinity of the oxide 530 b.

The energy level of the conduction band minimum gradually changes atjunction portions of the oxide 530 a, the oxide 530 b, and the oxide 530c. In other words, the energy level of the conduction band minimum atthe junction portions of the oxide 530 a, the oxide 530 b, and the oxide530 c continuously changes or is continuously connected. To obtain this,the density of defect states in a mixed layer formed at an interfacebetween the oxide 530 a and the oxide 530 b and an interface between theoxide 530 b and the oxide 530 c is preferably made low.

Specifically, when the oxide 530 a and the oxide 530 b or the oxide 530b and the oxide 530 c contain the same element (as a main component) inaddition to oxygen, a mixed layer with a low density of defect statescan be formed. For example, in the case where the oxide 530 b is anIn—Ga—Zn oxide, an In—Ga—Zn oxide, a Ga—Zn oxide, gallium oxide, or thelike is preferably used for the oxide 530 a and the oxide 530 c.

At this time, the oxide 530 b serves as a main carrier path. When theoxide 530 a and the oxide 530 c have the above structure, the density ofdefect states at the interface between the oxide 530 a and the oxide 530b and the interface between the oxide 530 b and the oxide 530 c can bemade low. Thus, the influence of interface scattering on carrierconduction is small, and the transistor 500 can have a high on-statecurrent.

The conductor 542 (the conductor 542 a and the conductor 542 b)functioning as the source electrode and the drain electrode is providedover the oxide 530 b. For the conductor 542, it is preferable to use ametal element selected from aluminum, chromium, copper, silver, gold,platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium,vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium,ruthenium, iridium, strontium, and lanthanum; an alloy containing any ofthe above metal elements; an alloy containing a combination of the abovemetal elements; or the like. For example, it is preferable to usetantalum nitride, titanium nitride, tungsten, a nitride containingtitanium and aluminum, a nitride containing tantalum and aluminum,ruthenium oxide, ruthenium nitride, an oxide containing strontium andruthenium, an oxide containing lanthanum and nickel, or the like.Tantalum nitride, titanium nitride, a nitride containing titanium andaluminum, a nitride containing tantalum and aluminum, ruthenium oxide,ruthenium nitride, an oxide containing strontium and ruthenium, and anoxide containing lanthanum and nickel are preferable because they areoxidation-resistant conductive materials or materials that retain theirconductivity even after absorbing oxygen.

As illustrated in FIG. 10(A), a region 543 (a region 543 a and a region543 b) is sometimes formed as a low-resistance region at and near theinterface between the oxide 530 and the conductor 542. In that case, theregion 543 a functions as one of a source region and a drain region, andthe region 543 b functions as the other of the source region and thedrain region. The channel formation region is formed in a region betweenthe region 543 a and the region 543 b.

When the conductor 542 is provided in contact with the oxide 530, theoxygen concentration in the region 543 sometimes decreases. In addition,a metal compound layer that contains the metal contained in theconductor 542 and the component of the oxide 530 is sometimes formed inthe region 543. In such a case, the carrier density of the region 543increases, and the region 543 becomes a low-resistance region.

The insulator 544 is provided to cover the conductor 542 and inhibitsoxidation of the conductor 542. At this time, the insulator 544 may beprovided to cover a side surface of the oxide 530 and to be in contactwith the insulator 524.

A metal oxide containing one or more kinds selected from hafnium,aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum,nickel, germanium, magnesium, and the like can be used as the insulator544.

For the insulator 544, it is particularly preferable to use an insulatorcontaining an oxide of one or both of aluminum and hafnium, for example,aluminum oxide, hafnium oxide, or an oxide containing aluminum andhafnium (hafnium aluminate). In particular, hafnium aluminate has higherheat resistance than a hafnium oxide film. Therefore, hafnium aluminateis preferable because it is less likely to be crystallized by heattreatment in a later step. Note that the insulator 544 is not anessential component when the conductor 542 is an oxidation-resistantmaterial or does not significantly lose its conductivity even afterabsorbing oxygen. Design is appropriately set in consideration ofrequired transistor characteristics.

The insulator 550 functions as a gate insulating film. The insulator 550is preferably positioned in contact with the inner side (the top surfaceand the side surface) of the oxide 530 c. The insulator 550 ispreferably formed using an insulator from which oxygen is released byheating. An oxide film in which the amount of released oxygen convertedinto oxygen atoms is greater than or equal to 1.0×10¹⁸ atoms/cm³,preferably greater than or equal to 1.0×10¹⁹ atoms/cm³, furtherpreferably greater than or equal to 2.0×10¹⁹ atoms/cm³ or greater thanor equal to 3.0×10²⁰ atoms/cm³ in thermal desorption spectroscopyanalysis (TDS analysis) is used, for example. Note that the temperatureof the film surface in the TDS analysis is preferably higher than orequal to 100° C. and lower than or equal to 700° C.

Specifically, silicon oxide containing excess oxygen, siliconoxynitride, silicon nitride oxide, silicon nitride, silicon oxide towhich fluorine is added, silicon oxide to which carbon is added, siliconoxide to which carbon and nitrogen are added, porous silicon oxide, orthe like can be used. In particular, silicon oxide and siliconoxynitride, which have thermal stability, are preferable.

When an insulator from which oxygen is released by heating is providedas the insulator 550 in contact with the top surface of the oxide 530 c,oxygen can be efficiently supplied from the insulator 550 to the channelformation region of the oxide 530 b through the oxide 530 c.Furthermore, as in the insulator 524, the concentration of impuritiessuch as water or hydrogen in the insulator 550 is preferably reduced.The thickness of the insulator 550 is preferably greater than or equalto 1 nm and less than or equal to 20 nm.

To efficiently supply excess oxygen in the insulator 550 to the oxide530, a metal oxide may be provided between the insulator 550 and theconductor 560. The metal oxide preferably inhibits diffusion of oxygenfrom the insulator 550 to the conductor 560. Providing the metal oxidethat inhibits diffusion of oxygen inhibits diffusion of excess oxygenfrom the insulator 550 to the conductor 560. That is, a reduction in theamount of excess oxygen supplied to the oxide 530 can be inhibited.Moreover, oxidization of the conductor 560 due to excess oxygen can beinhibited. For the metal oxide, a material that can be used for theinsulator 544 is used.

Although the conductor 560 functioning as a gate electrode has atwo-layer structure in FIGS. 10(A) and 10(B), a single-layer structureor a stacked-layer structure of three or more layers may be employed.

For the conductor 560 a, it is preferable to use a conductive materialhaving a function of inhibiting diffusion of impurities such as ahydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, anitrogen molecule, a nitrogen oxide molecule (N₂O, NO, NO₂, and thelike), and a copper atom. Alternatively, it is preferable to use aconductive material having a function of inhibiting diffusion of oxygen(e.g., at least one of an oxygen atom, an oxygen molecule, and thelike). When the conductor 560 a has a function of inhibiting oxygendiffusion, it is possible to prevent a reduction in conductivity of theconductor 560 b due to oxidation caused by oxygen contained in theinsulator 550. As a conductive material having a function of inhibitingoxygen diffusion, for example, tantalum, tantalum nitride, ruthenium,ruthenium oxide, or the like is preferably used.

The conductor 560 b is preferably formed using a conductive materialcontaining tungsten, copper, or aluminum as its main component. Theconductor 560 b also functions as a wiring and thus is preferably formedusing a conductor having high conductivity. For example, a conductivematerial containing tungsten, copper, or aluminum as its main componentcan be used. The conductor 560 b may have a stacked-layer structure, forexample, a stacked-layer structure of any of the above conductivematerials and titanium or titanium nitride.

The insulator 580 is provided over the conductor 542 with the insulator544 therebetween. The insulator 580 preferably includes an excess-oxygenregion. For example, the insulator 580 preferably contains siliconoxide, silicon oxynitride, silicon nitride oxide, silicon nitride,silicon oxide to which fluorine is added, silicon oxide to which carbonis added, silicon oxide to which carbon and nitrogen are added, poroussilicon oxide, a resin, or the like. In particular, silicon oxide andsilicon oxynitride, which have thermal stability, are preferable. Inparticular, silicon oxide and porous silicon oxide, in which anexcess-oxygen region can be easily formed in a later step, arepreferable.

The insulator 580 preferably includes an excess-oxygen region. When theinsulator 580 from which oxygen is released by heating is provided incontact with the oxide 530 c, oxygen in the insulator 580 can beefficiently supplied to the oxide 530 through the oxide 530 c. Note thatthe concentration of impurities such as water or hydrogen in theinsulator 580 is preferably lowered.

The opening of the insulator 580 is formed to overlap with a regionbetween the conductor 542 a and the conductor 542 b. Accordingly, theconductor 560 is formed to be embedded in the opening of the insulator580 and the region between the conductor 542 a and the conductor 542 b.

The gate length needs to be short for miniaturization of thesemiconductor device, but it is necessary to prevent a reduction inconductivity of the conductor 560. When the conductor 560 is made thickto achieve this, the conductor 560 might have a shape with a high aspectratio. In this embodiment, the conductor 560 is provided to be embeddedin the opening of the insulator 580; hence, even when the conductor 560has a shape with a high aspect ratio, the conductor 560 can be formedwithout collapsing during the process.

The insulator 574 is preferably provided in contact with the top surfaceof the insulator 580, the top surface of the conductor 560, and the topsurface of the insulator 550. When the insulator 574 is deposited by asputtering method, excess-oxygen regions can be provided in theinsulator 550 and the insulator 580. Accordingly, oxygen can be suppliedfrom the excess-oxygen regions to the oxide 530.

For example, a metal oxide containing one or more kinds selected fromhafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium,tantalum, nickel, germanium, magnesium, and the like can be used as theinsulator 574.

In particular, aluminum oxide has a high barrier property, and even athin aluminum oxide film having a thickness greater than or equal to 0.5nm and less than or equal to 3.0 nm can inhibit diffusion of hydrogenand nitrogen. Accordingly, aluminum oxide deposited by a sputteringmethod serves as an oxygen supply source and can also have a function ofa barrier film against impurities such as hydrogen.

An insulator 581 functioning as an interlayer film is preferablyprovided over the insulator 574. As in the insulator 524 or the like,the concentration of impurities such as water or hydrogen in theinsulator 581 is preferably lowered.

A conductor 540 a and a conductor 540 b are positioned in openingsformed in the insulator 581, the insulator 574, the insulator 580, andthe insulator 544. The conductor 540 a and the conductor 540 b areprovided to face each other with the conductor 560 therebetween. Thestructures of the conductor 540 a and the conductor 540 b are similar toa structure of a conductor 546 and a conductor 548 that will bedescribed later.

An insulator 582 is provided over the insulator 581. A substance havinga barrier property against oxygen or hydrogen is preferably used for theinsulator 582. Therefore, a material similar to that for the insulator514 can be used for the insulator 582. For the insulator 582, a metaloxide such as aluminum oxide, hafnium oxide, or tantalum oxide ispreferably used, for example.

In particular, aluminum oxide has a high blocking effect that inhibitsthe passage of both oxygen and impurities such as hydrogen and moisturewhich are factors of a change in electrical characteristics of thetransistor. Accordingly, aluminum oxide can prevent the entry ofimpurities such as hydrogen and moisture into the transistor 500 in thefabrication process and after the fabrication of the transistor. Inaddition, release of oxygen from the oxide included in the transistor500 can be inhibited. Therefore, aluminum oxide is suitably used for aprotective film of the transistor 500.

An insulator 586 is provided over the insulator 582. For the insulator586, a material similar to that for the insulator 320 can be used. Whena material with a relatively low permittivity is used for an interlayerfilm, the parasitic capacitance between wirings can be reduced. Forexample, a silicon oxide film, a silicon oxynitride film, or the likecan be used for the insulator 586.

The conductor 546, the conductor 548, and the like are embedded in theinsulator 520, the insulator 522, the insulator 524, the insulator 544,the insulator 580, the insulator 574, the insulator 581, the insulator582, and the insulator 586.

The conductor 546 and the conductor 548 have functions of plugs orwirings that are connected to the capacitor 600, the transistor 500, orthe transistor 300. The conductor 546 and the conductor 548 can beprovided using a material similar to those for the conductor 328 and theconductor 330.

In addition, the capacitor 600 is provided above the transistor 500. Thecapacitor 600 includes a conductor 610, a conductor 620, and aninsulator 630.

A conductor 612 may be provided over the conductor 546 and the conductor548. The conductor 612 has a function of a plug or a wiring that isconnected to the transistor 500. The conductor 610 has a function of anelectrode of the capacitor 600. The conductor 612 and the conductor 610can be formed at the same time.

The conductor 612 and the conductor 610 can be formed using a metal filmcontaining an element selected from molybdenum, titanium, tantalum,tungsten, aluminum, copper, chromium, neodymium, and scandium; a metalnitride film containing any of the above elements as its component (atantalum nitride film, a titanium nitride film, a molybdenum nitridefilm, or a tungsten nitride film); or the like. Alternatively, it ispossible to use a conductive material such as indium tin oxide, indiumoxide containing tungsten oxide, indium zinc oxide containing tungstenoxide, indium oxide containing titanium oxide, indium tin oxidecontaining titanium oxide, indium zinc oxide, or indium tin oxide towhich silicon oxide is added.

Although the conductor 612 and the conductor 610 each of which has asingle-layer structure are illustrated in FIG. 9 , the structure is notlimited thereto; a stacked-layer structure of two or more layers may beemployed. For example, between a conductor having a barrier property anda conductor having high conductivity, a conductor that is highlyadhesive to the conductor having a barrier property and the conductorhaving high conductivity may be formed.

The conductor 620 is provided to overlap with the conductor 610 with theinsulator 630 therebetween. The conductor 620 can be formed using aconductive material such as a metal material, an alloy material, or ametal oxide material. It is preferable to use a high-melting-pointmaterial that has both heat resistance and conductivity, such astungsten or molybdenum, and it is particularly preferable to usetungsten. In the case where the conductor 620 is formed concurrentlywith another component such as a conductor, Cu (copper), Al (aluminum),or the like, which is a low-resistance metal material, can be used.

An insulator 650 is provided over the conductor 620 and the insulator630. The insulator 650 can be provided using a material similar to thatfor the insulator 320. The insulator 650 may function as a planarizationfilm that covers an uneven shape thereunder.

With the use of this structure, a change in electrical characteristicscan be inhibited and reliability can be improved in a semiconductordevice using a transistor including an oxide semiconductor.Alternatively, a transistor including an oxide semiconductor and havinga high on-state current can be provided. Alternatively, a transistorincluding an oxide semiconductor and having a low off-state current canbe provided. Alternatively, a semiconductor device with low powerconsumption can be provided. Alternatively, a semiconductor device usinga transistor including an oxide semiconductor can be miniaturized orhighly integrated.

Transistor Structure Examples

Note that the structure of the transistor 500 in the semiconductordevice described in this embodiment is not limited to the above.Examples of structures that can be used for the transistor 500 will bedescribed below.

Transistor Structure Example 1

A structure example of a transistor 510A is described with reference toFIGS. 11(A), 11(B), and 11(C). FIG. 11(A) is a top view of thetransistor 510A. FIG. 11(B) is a cross-sectional view of a portionindicated by a dashed-dotted line L1-L2 in FIG. 11(A). FIG. 11(C) is across-sectional view of a portion indicated by a dashed-dotted lineW1-W2 in FIG. 11(A). Note that for clarification of the drawing, somecomponents are not illustrated in the top view of FIG. 11(A).

FIGS. 11(A), 11(B), and 11(C) illustrate a transistor 510A and theinsulator 511, the insulator 512, the insulator 514, the insulator 516,the insulator 580, the insulator 582, and an insulator 584 that functionas interlayer films. In addition, conductor 546 (a conductor 546 a and aconductor 546 b) that is electrically connected to the transistor 510Aand functions as a contact plug is illustrated.

The transistor 510A includes the conductor 560 (the conductor 560 a andthe conductor 560 b) functioning as a gate electrode; the insulator 550functioning as a gate insulating film; the oxide 530 (the oxide 530 a,the oxide 530 b, and the oxide 530 c) including a region where a channelis formed; the conductor 542 a functioning as one of a source and adrain; the conductor 542 b functioning as the other of the source andthe drain; and the insulator 574.

In the transistor 510A illustrated in FIG. 11 , the oxide 530 c, theinsulator 550, and the conductor 560 are positioned in an openingprovided in the insulator 580 with the insulator 574 positionedtherebetween. Moreover, the oxide 530 c, the insulator 550, and theconductor 560 are positioned between the conductor 542 a and theconductor 542 b.

The insulator 511 and the insulator 512 function as interlayer films.

As the interlayer film, a single layer or stacked layers of an insulatorsuch as silicon oxide, silicon oxynitride, silicon nitride oxide,aluminum oxide, hafnium oxide, tantalum oxide, zirconium oxide, leadzirconate titanate (PZT), strontium titanate (SrTiO₃), or (Ba,Sr)TiO₃(BST) can be used. Alternatively, aluminum oxide, bismuth oxide,germanium oxide, niobium oxide, silicon oxide, titanium oxide, tungstenoxide, yttrium oxide, or zirconium oxide may be added to theseinsulators, for example. Alternatively, these insulators may besubjected to nitriding treatment. Silicon oxide, silicon oxynitride, orsilicon nitride may be stacked over the insulator.

For example, the insulator 511 preferably functions as a barrier filmthat inhibits entry of impurities such as water or hydrogen into thetransistor 510A from the substrate side. Accordingly, for the insulator511, it is preferable to use an insulating material that has a functionof inhibiting diffusion of impurities such as a hydrogen atom, ahydrogen molecule, a water molecule, and a copper atom (through whichthe above impurities do not easily pass). Alternatively, it ispreferable to use an insulating material that has a function ofinhibiting diffusion of oxygen (e.g., at least one of oxygen atoms,oxygen molecules, and the like) (through which the above oxygen does noteasily pass). Moreover, aluminum oxide or silicon nitride, for example,may be used for the insulator 511. This structure can inhibit diffusionof impurities such as hydrogen and water to the transistor 510A sidefrom the substrate side of the insulator 511.

For example, the dielectric constant of the insulator 512 is preferablylower than that of the insulator 511. When a material with a lowdielectric constant is used for the interlayer film, the parasiticcapacitance generated between wirings can be reduced.

In the transistor 510A, the conductor 560 sometimes functions as a gateelectrode.

Like the insulator 511 or the insulator 512, the insulator 514 and theinsulator 516 function as interlayer films. For example, the insulator514 preferably functions as a barrier film that inhibits entry ofimpurities such as water or hydrogen into the transistor 510A from thesubstrate side. This structure can inhibit diffusion of impurities suchas hydrogen and water to the transistor 510A side from the substrateside of the insulator 514. Moreover, for example, the insulator 516preferably has a lower dielectric constant than the insulator 514. Whena material with a low dielectric constant is used for the interlayerfilm, the parasitic capacitance generated between wirings can bereduced.

The insulator 522 preferably has a barrier property. The insulator 522having a barrier property functions as a layer that inhibits entry ofimpurities such as hydrogen into the transistor 510A from thesurroundings of the transistor 510A.

For the insulator 522, a single layer or stacked layers of an insulatorcontaining what is called a high-k material such as aluminum oxide,hafnium oxide, an oxide containing aluminum and hafnium (hafniumaluminate), tantalum oxide, zirconium oxide, lead zirconate titanate(PZT), strontium titanate (SrTiO₃), or (Ba,Sr)TiO₃ (BST) are preferablyused, for example. As miniaturization and high integration oftransistors progress, a problem such as leakage current may arisebecause of a thinner gate insulating film. When a high-k material isused for an insulator functioning as the gate insulating film, a gatepotential during operation of the transistor can be reduced while thephysical thickness is maintained.

For example, it is preferable that the insulator 521 be thermallystable. For example, silicon oxide and silicon oxynitride, which havethermal stability, are preferable. In addition, a combination of aninsulator of a high-k material and silicon oxide or silicon oxynitrideallows the insulator 521 to have a stacked-layer structure with thermalstability and a high dielectric constant.

The oxide 530 including a region functioning as the channel formationregion includes the oxide 530 a, the oxide 530 b over the oxide 530 a,and the oxide 530 c over the oxide 530 b. Including the oxide 530 aunder the oxide 530 b makes it possible to inhibit diffusion ofimpurities into the oxide 530 b from the components formed below theoxide 530 a. Moreover, including the oxide 530 c over the oxide 530 bmakes it possible to inhibit diffusion of impurities into the oxide 530b from the components formed above the oxide 530 c. As the oxide 530,the above-described oxide semiconductor, which is one kind of metaloxide, can be used.

Note that the oxide 530 c is preferably provided in the opening in theinsulator 580 with the insulator 574 positioned therebetween. When theinsulator 574 has a barrier property, diffusion of impurities from theinsulator 580 into the oxide 530 can be inhibited.

One of the conductors 542 functions as a source electrode and the otherfunctions as a drain electrode.

For the conductor 542 a and the conductor 542 b, a metal such asaluminum, titanium, chromium, nickel, copper, yttrium, zirconium,molybdenum, silver, tantalum, or tungsten or an alloy containing any ofthe metals as its main component can be used. In particular, a metalnitride film of tantalum nitride or the like is preferable because ithas a barrier property against hydrogen or oxygen and its oxidationresistance is high.

Although a single-layer structure is shown in FIG. 11 , a stacked-layerstructure of two or more layers may be employed. For example, a tantalumnitride film and a tungsten film may be stacked. Alternatively, atitanium film and an aluminum film may be stacked. Furtheralternatively, a two-layer structure where an aluminum film is stackedover a tungsten film, a two-layer structure where a copper film isstacked over a copper-magnesium-aluminum alloy film, a two-layerstructure where a copper film is stacked over a titanium film, or atwo-layer structure where a copper film is stacked over a tungsten filmmay be employed.

A three-layer structure consisting of a titanium film or a titaniumnitride film, an aluminum film or a copper film stacked over thetitanium film or the titanium nitride film, and a titanium film or atitanium nitride film formed thereover; a three-layer structureconsisting of a molybdenum film or a molybdenum nitride film, analuminum film or a copper film stacked over the molybdenum film or themolybdenum nitride film, and a molybdenum film or a molybdenum nitridefilm formed thereover; or the like may be employed. Note that atransparent conductive material containing indium oxide, tin oxide, orzinc oxide may be used.

A barrier layer may be provided over the conductor 542. The barrierlayer is preferably formed using a material having a barrier propertyagainst oxygen or hydrogen. This structure can inhibit oxidation of theconductor 542 at the time of deposition of the insulator 574.

A metal oxide can be used for the barrier layer, for example. Inparticular, an insulating film of aluminum oxide, hafnium oxide, galliumoxide, or the like, which has a barrier property against oxygen andhydrogen, is preferably used. Alternatively, silicon nitride formed by aCVD method may be used.

With the barrier layer, the range of choices for the material of theconductor 542 can be expanded. For example, a material having a lowoxidation resistance and high conductivity, such as tungsten oraluminum, can be used for the conductor 542. Moreover, for example, aconductor that can be easily deposited or processed can be used.

The insulator 550 functions as a first gate insulating film. Theinsulator 550 is preferably provided in the opening in the insulator 580with the oxide 530 c and the insulator 574 positioned therebetween.

As miniaturization and high integration of transistors progress, aproblem such as leakage current may arise because of thinner gateinsulating. In that case, the insulator 550 may have a stacked-layerstructure. When the insulator functioning as the gate insulating filmhas a stacked-layer structure of a high-k material and a thermallystable material, a gate potential during operation of the transistor canbe reduced while the physical thickness is maintained. Furthermore, thestacked-layer structure can be thermally stable and have a highdielectric constant.

The conductor 560 functioning as a gate electrode includes the conductor560 a and the conductor 560 b over the conductor 560 a. For theconductor 560 a, a conductive material that has a function of inhibitingdiffusion of impurities such as a hydrogen atom, a hydrogen molecule, awater molecule, and a copper atom is preferably used. Alternatively, itis preferable to use a conductive material that has a function ofinhibiting diffusion of oxygen (e.g., at least one of oxygen atoms,oxygen molecules, and the like). Note that in this specification, afunction of inhibiting diffusion of impurities or oxygen means afunction of inhibiting diffusion of any one or all of the aboveimpurities and the above oxygen.

When the conductor 560 a has a function of inhibiting oxygen diffusion,the range of choices for the material of the conductor 560 b can beexpanded. That is, the conductor 560 a inhibits oxidation of theconductor 560 b, thereby preventing the decrease in conductivity.

As a conductive material having a function of inhibiting diffusion ofoxygen, for example, tantalum, tantalum nitride, ruthenium, or rutheniumoxide is preferably used. For the conductor 560 a, the oxidesemiconductor that can be used as the oxide 530 can be used. In thatcase, when the conductor 560 b is deposited by a sputtering method, theconductor 560 a can have a reduced electric resistance to be aconductor. This can be referred to as an OC (Oxide Conductor) electrode.

The conductor 560 b is preferably formed using a conductive materialcontaining tungsten, copper, or aluminum as its main component. Theconductor 560 functions as a wiring and thus is preferably formed usinga conductor having high conductivity. For example, a conductive materialcontaining tungsten, copper, or aluminum as its main component can beused. The conductor 560 b may have a stacked-layer structure, forexample, a stack of any of the above conductive materials and titaniumor titanium nitride.

The insulator 574 is positioned between the insulator 580 and thetransistor 510A. For the insulator 574, an insulating material having afunction of inhibiting diffusion of oxygen and impurities such as wateror hydrogen is preferably used. For example, aluminum oxide or hafniumoxide is preferably used. Moreover, it is possible to use, for example,a metal oxide such as magnesium oxide, gallium oxide, germanium oxide,yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, ortantalum oxide or silicon nitride oxide, silicon nitride, or the like.

The insulator 574 can inhibit diffusion of impurities such as water andhydrogen contained in the insulator 580 into the oxide 530 b through theoxide 530 c and the insulator 550. Furthermore, oxidation of theconductor 560 due to excess oxygen contained in the insulator 580 can beinhibited.

The insulator 580, the insulator 582, and the insulator 584 function asinterlayer films.

Like the insulator 514, the insulator 582 preferably functions as abarrier insulating film that inhibits entry of impurities such as wateror hydrogen into the transistor 510A from the outside.

Like the insulator 516, the insulator 580 and the insulator 584preferably have a lower dielectric constant than the insulator 582. Whena material with a low dielectric constant is used for the interlayerfilms, the parasitic capacitance generated between wirings can bereduced.

The transistor 510A may be electrically connected to another componentthrough a plug or a wiring such as the conductor 546 embedded in theinsulator 580, the insulator 582, and the insulator 584.

As a material for the conductor 546, a conductive material such as ametal material, an alloy material, a metal nitride material, or a metaloxide material can be used as a single layer or stacked layers. Forexample, it is preferable to use a high-melting-point material that hasboth heat resistance and conductivity, such as tungsten or molybdenum.Alternatively, it is preferable to use a low-resistance conductivematerial such as aluminum or copper. The use of a low-resistanceconductive material can reduce wiring resistance.

When the conductor 546 has a stacked-layer structure of tantalum nitrideor the like, which is a conductor having a barrier property againsthydrogen and oxygen, and tungsten, which has high conductivity,diffusion of impurities from the outside can be inhibited while theconductivity of a wiring is maintained.

With the above structure, a semiconductor device including a transistorthat contains an oxide semiconductor and has a high on-state current canbe provided. Alternatively, a semiconductor device including atransistor that contains an oxide semiconductor and has a low off-statecurrent can be provided. Alternatively, a semiconductor device that hassmall variations in electrical characteristics, stable electricalcharacteristics, and high reliability can be provided.

Transistor Structure Example 2

A structure example of a transistor 510B is described with reference toFIGS. 12(A), 12(B), and 12(C). FIG. 12(A) is a top view of thetransistor 510B. FIG. 12(B) is a cross-sectional view of a portionindicated by a dashed-dotted line L1-L2 in FIG. 12(A). FIG. 12(C) is across-sectional view of a portion indicated by a dashed-dotted lineW1-W2 in FIG. 12(A). Note that for clarification of the drawing, somecomponents are not illustrated in the top view of FIG. 12(A).

The transistor 510B is a variation example of the transistor 510A.Therefore, differences from the transistor 510A will be mainly describedto avoid repeated description.

The transistor 510B includes a region where the conductor 542 (theconductor 542 a and the conductor 542 b), the oxide 530 c, the insulator550, and the conductor 560 overlap with each other. With this structure,a transistor having a high on-state current can be provided. Moreover, atransistor having high controllability can be provided.

The conductor 560 functioning as a gate electrode includes the conductor560 a and the conductor 560 b over the conductor 560 a. The conductor560 a is preferably formed using a conductive material having a functionof inhibiting diffusion of impurities such as a hydrogen atom, ahydrogen molecule, a water molecule, and a copper atom. Alternatively,it is preferable to use a conductive material having a function ofinhibiting diffusion of oxygen (e.g., at least one of an oxygen atom, anoxygen molecule, and the like).

When the conductor 560 a has a function of inhibiting oxygen diffusion,the range of choices for the material of the conductor 560 b can beexpanded. That is, the conductor 560 a inhibits oxidation of theconductor 560 b, thereby preventing the decrease in conductivity.

The insulator 574 is preferably provided to cover the top surface and aside surface of the conductor 560, a side surface of the insulator 550,and the side surface of the oxide 530 c. For the insulator 574, aninsulating material having a function of inhibiting diffusion of oxygenand impurities such as water or hydrogen is preferably used. Forexample, aluminum oxide or hafnium oxide is preferably used. Moreover,it is possible to use, for example, a metal oxide such as magnesiumoxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide,lanthanum oxide, neodymium oxide, or tantalum oxide or silicon nitrideoxide, silicon nitride, or the like.

The insulator 574 can inhibit oxidation of the conductor 560. Moreover,the insulator 574 can inhibit diffusion of impurities such as water andhydrogen contained in the insulator 580 into the transistor 510B.

An insulator 576 (an insulator 576 a and an insulator 576 b) having abarrier property may be provided between the conductor 546 and theinsulator 580. Providing the insulator 576 can prevent oxygen in theinsulator 580 from reacting with the conductor 546 and oxidizing theconductor 546.

Furthermore, with the insulator 576 having a barrier property, the rangeof choices for the material of the conductor used as the plug or thewiring can be expanded. The use of a metal material having an oxygenabsorbing property and high conductivity for the conductor 546, forexample, can provide a semiconductor device with low power consumption.Specifically, a material having a low oxidation resistance and highconductivity, such as tungsten or aluminum, can be used. Moreover, forexample, a conductor that can be easily deposited or processed can beused.

Transistor Structure Example 3

A structure example of a transistor 510C is described with reference toFIGS. 13(A), 13(B), and 13(C). FIG. 13(A) is a top view of thetransistor 510C. FIG. 13(B) is a cross-sectional view of a portionindicated by a dashed-dotted line L1-L2 in FIG. 13(A). FIG. 13(C) is across-sectional view of a portion indicated by a dashed-dotted lineW1-W2 in FIG. 13(A). Note that for clarification of the drawing, somecomponents are not illustrated in the top view of FIG. 13(A).

The transistor 510C is a variation example of the transistor 510A.Therefore, differences from the transistor 510A will be mainly describedto avoid repeated description.

In the transistor 510C illustrated in FIG. 13 , a conductor 547 a ispositioned between the conductor 542 a and the oxide 530 b and aconductor 547 b is positioned between the conductor 542 b and the oxide530 b. Here, the conductor 542 a (the conductor 542 b) has a region thatextends beyond the top surface and a side surface on the conductor 560side of the conductor 547 a (the conductor 547 b) and is in contact withthe top surface of the oxide 530 b. For the conductors 547, a conductorthat can be used for the conductor 542 is used. It is preferred that thethickness of the conductor 547 be at least greater than that of theconductor 542.

In the transistor 510C illustrated in FIG. 13 , because of the abovestructure, the conductor 542 can be closer to the conductor 560 than inthe transistor 510A. Alternatively, the conductor 560 and an end portionof the conductor 542 a and an end portion of the conductor 542 b canoverlap with each other. Accordingly, the effective channel length ofthe transistor 510C can be shortened, and the on-state current and thefrequency characteristics can be improved.

The conductor 547 a (the conductor 547 b) is preferably provided to beoverlapped by the conductor 542 a (the conductor 542 b). With such astructure, the conductor 547 a (the conductor 547 b) can function as astopper to prevent over-etching of the oxide 530 b in etching forforming the opening in which the conductor 546 a (the conductor 546 b)is to be embedded.

The transistor 510C illustrated in FIG. 13 may have a structure in whichan insulator 545 is positioned on and in contact with the insulator 544.The insulator 544 preferably functions as a barrier insulating film thatinhibits entry of impurities such as water or hydrogen and excess oxygeninto the transistor 510C from the insulator 580 side. The insulator 544can be formed using an insulator that can be used for the insulator 545.In addition, the insulator 544 may be formed using a nitride insulatorsuch as aluminum nitride, aluminum titanium nitride, titanium nitride,silicon nitride, or silicon nitride oxide, for example.

Transistor Structure Example 4

A structure example of a transistor 510D is described with reference toFIGS. 14(A), 14(B), and 14(C). FIG. 14(A) is a top view of thetransistor 510D. FIG. 14(B) is a cross-sectional view of a portionindicated by a dashed-dotted line L1-L2 in FIG. 14(A). FIG. 14(C) is across-sectional view of a portion indicated by a dashed-dotted lineW1-W2 in FIG. 14(A). Note that for clarification of the drawing, somecomponents are not illustrated in the top view of FIG. 14(A).

The transistor 510D is a variation example of the above transistors.Therefore, differences from the above transistors will be mainlydescribed to avoid repeated description.

In FIGS. 14(A) to 14(C), the insulator 550 is provided over the oxide530 c and a metal oxide 552 is provided over the insulator 550. Theconductor 560 is provided over the metal oxide 552, and an insulator 570is provided over the conductor 560. An insulator 571 is provided overthe insulator 570.

The metal oxide 552 preferably has a function of inhibiting diffusion ofoxygen. When the metal oxide 552 that inhibits oxygen diffusion isprovided between the insulator 550 and the conductor 560, diffusion ofoxygen into the conductor 560 is inhibited. That is, a reduction in theamount of oxygen supplied to the oxide 530 can be inhibited. Moreover,oxidization of the conductor 560 due to oxygen can be suppressed.

Note that the metal oxide 552 may function as part of a gate. Forexample, an oxide semiconductor that can be used for the oxide 530 canbe used for the metal oxide 552. In this case, when the conductor 560 isdeposited by a sputtering method, the metal oxide 552 can have a reducedelectric resistance to be a conductive layer. This can be called an OCelectrode.

Note that the metal oxide 552 functions as part of a gate insulatingfilm in some cases. Thus, when silicon oxide, silicon oxynitride, or thelike is used for the insulator 550, a metal oxide that is a high-kmaterial with a high dielectric constant is preferably used for themetal oxide 552. Such a stacked-layer structure can be thermally stableand can have a high dielectric constant. Thus, a gate potential that isapplied during operation of the transistor can be reduced while thephysical thickness is maintained. In addition, the equivalent oxidethickness (EOT) of the insulating layer functioning as the gateinsulating film can be reduced.

Although the metal oxide 552 in the transistor 510D is shown as a singlelayer, the metal oxide 552 may have a stacked-layer structure of two ormore layers. For example, a metal oxide functioning as part of a gateelectrode and a metal oxide functioning as part of the gate insulatingfilm may be stacked.

With the metal oxide 552 functioning as a gate electrode, the on-statecurrent of the transistor 510D can be increased without a reduction inthe influence of the electric field from the conductor 560. With themetal oxide 552 functioning as the gate insulating film, the distancebetween the conductor 560 and the oxide 530 is kept by the physicalthicknesses of the insulator 550 and the metal oxide 552, so thatleakage current between the conductor 560 and the oxide 530 can bereduced. Thus, with the stacked-layer structure of the insulator 550 andthe metal oxide 552, the physical distance between the conductor 560 andthe oxide 530 and the intensity of electric field applied from theconductor 560 to the oxide 530 can be easily adjusted as appropriate.

Specifically, the oxide semiconductor that can be used for the oxide 530can also be used for the metal oxide 552 when the resistance thereof isreduced. Alternatively, a metal oxide containing one kind or two or morekinds selected from hafnium, aluminum, gallium, yttrium, zirconium,tungsten, titanium, tantalum, nickel, germanium, magnesium, and the likecan be used.

It is particularly preferable to use an insulating layer containing anoxide of one or both of aluminum and hafnium, for example, aluminumoxide, hafnium oxide, or an oxide containing aluminum and hafnium(hafnium aluminate). In particular, hafnium aluminate has higher heatresistance than a hafnium oxide film. Therefore, hafnium aluminate ispreferable since it is less likely to be crystallized by heat treatmentin a later step. Note that the metal oxide 552 is not an essentialstructure. Design is appropriately set in consideration of requiredtransistor characteristics.

For the insulator 570, an insulating material having a function ofinhibiting the passage of oxygen and impurities such as water andhydrogen is preferably used. For example, aluminum oxide or hafniumoxide is preferably used. Thus, oxidization of the conductor 560 due tooxygen from above the insulator 570 can be inhibited. Moreover, entry ofimpurities such as water and hydrogen from above the insulator 570 intothe oxide 530 through the conductor 560 and the insulator 550 can beinhibited.

The insulator 571 functions as a hard mask. By providing the insulator571, the conductor 560 can be processed to have a side surface that issubstantially vertical; specifically, an angle formed by the sidesurface of the conductor 560 and a surface of the substrate can begreater than or equal to 75° and less than or equal to 100°, preferablygreater than or equal to 80° and less than or equal to 95°.

An insulating material having a function of inhibiting the passage ofoxygen and impurities such as water and hydrogen may be used for theinsulator 571 so that the insulator 571 also functions as a barrierlayer. In that case, the insulator 570 does not have to be provided.

Parts of the insulator 570, the conductor 560, the metal oxide 552, theinsulator 550, and the oxide 530 c are selected and removed using theinsulator 571 as a hard mask, whereby their side surfaces can besubstantially aligned with each other and a surface of the oxide 530 bcan be partly exposed.

The transistor 510D includes a region 531 a and a region 531 b on partof the exposed surface of the oxide 530 b. One of the region 531 a andthe region 531 b functions as a source region, and the other functionsas a drain region.

The region 531 a and the region 531 b can be formed by addition of animpurity element such as phosphorus or boron to the exposed surface ofthe oxide 530 b by an ion implantation method, an ion doping method, aplasma immersion ion implantation method, or plasma treatment, forexample. In this embodiment and the like, an “impurity element” refersto an element other than main constituent elements.

Alternatively, the region 531 a and the region 531 b can be formed insuch manner that, after part of the surface of the oxide 530 b isexposed, a metal film is formed and then heat treatment is performed sothat the element contained in the metal film is diffused into the oxide530 b.

The electrical resistivity of regions of the oxide 530 b to which theimpurity element is added decreases. For that reason, the region 531 aand the region 531 b are sometimes referred to “impurity regions” or“low-resistance regions”.

The region 531 a and the region 531 b can be formed in a self-alignedmanner by using the insulator 571 and/or the conductor 560 as a mask.Accordingly, the conductor 560 does not overlap with the region 531 aand/or the region 531 b, so that the parasitic capacitance can bereduced. Moreover, an offset region is not formed between a channelformation region and the source/drain region (the region 531 a or theregion 531 b). The formation of the region 531 a and the region 531 b ina self-aligned manner achieves an increase in on-state current, areduction in threshold voltage, and an improvement in operatingfrequency, for example.

Note that an offset region may be provided between the channel formationregion and the source/drain region in order to further reduce theoff-state current. The offset region is a region where the electricalresistivity is high and a region where the above-described addition ofthe impurity element is not performed. The offset region can be formedby the above-described addition of the impurity element after theformation of an insulator 575. In this case, the insulator 575 serves asa mask like the insulator 571 or the like. Thus, the impurity element isnot added to a region of the oxide 530 b overlapped by the insulator575, so that the electrical resistivity of the region can be kept high.

The transistor 510D includes the insulator 575 on the side surfaces ofthe insulator 570, the conductor 560, the metal oxide 552, the insulator550, and the oxide 530 c. The insulator 575 is preferably an insulatorhaving a low dielectric constant. For example, silicon oxide, siliconoxynitride, silicon nitride oxide, silicon nitride, silicon oxide towhich fluorine is added, silicon oxide to which carbon is added, siliconoxide to which carbon and nitrogen are added, porous silicon oxide, aresin, or the like is preferably used. In particular, silicon oxide,silicon oxynitride, silicon nitride oxide, or porous silicon oxide ispreferably used for the insulator 575, in which case an excess-oxygenregion can be easily formed in the insulator 575 in a later step.Silicon oxide and silicon oxynitride are preferable because of theirthermal stability. The insulator 575 preferably has a function ofdiffusing oxygen.

The transistor 510D also includes the insulator 574 over the insulator575 and the oxide 530. The insulator 574 is preferably deposited by asputtering method. When a sputtering method is used, an insulatorcontaining few impurities such as water and hydrogen can be deposited.For example, aluminum oxide is preferably used for the insulator 574.

Note that an oxide film obtained by a sputtering method may extracthydrogen from the structure body over which the oxide film is deposited.Thus, the hydrogen concentration in the oxide 530 and the insulator 575can be reduced when the insulator 574 absorbs hydrogen and water fromthe oxide 530 and the insulator 575.

Transistor Structure Example 5

A structure example of a transistor 510E is described with reference toFIG. 15(A) to FIG. 15(C). FIG. 15(A) is a top view of the transistor510E. FIG. 15(B) is a cross-sectional view of a portion indicated by adashed-dotted line L1-L2 in FIG. 15(A). FIG. 15(C) is a cross-sectionalview of a portion indicated by a dashed-dotted line W1-W2 in FIG. 15(A).Note that for clarification of the drawing, some components are notillustrated in the top view of FIG. 15(A).

The transistor 510E is a variation example of the above transistors.Therefore, differences from the above transistors will be mainlydescribed to avoid repeated description.

In FIGS. 15(A) to 15(C), the conductor 542 is not provided, and part ofthe exposed surface of the oxide 530 b includes the region 531 a and theregion 531 b. One of the region 531 a and the region 531 b functions asa source region, and the other functions as a drain region. Moreover, aninsulator 573 is included between the oxide 530 b and the insulator 574.

The regions 531 (the region 531 a and the region 531 b) illustrated inFIG. 15 are regions where an element described below is added to theoxide 530 b. The regions 531 can be formed with the use of a dummy gate,for example.

Specifically, a dummy gate is provided over the oxide 530 b, and theabove element that reduces the resistance of the oxide 530 b is addedusing the dummy gate as a mask. That is, the element is added to regionsof the oxide 530 that are not overlapped by the dummy gate, whereby theregions 531 are formed. As a method of adding the element, an ionimplantation method by which an ionized source gas is subjected to massseparation and then added, an ion doping method by which an ionizedsource gas is added without mass separation, a plasma immersion ionimplantation method, or the like can be used.

Typical examples of the element that reduces the resistance of the oxide530 are boron and phosphorus. Moreover, hydrogen, carbon, nitrogen,fluorine, sulfur, chlorine, titanium, a rare gas, or the like may beused. Typical examples of the rare gas include helium, neon, argon,krypton, and xenon. The concentration of the element is measured bysecondary ion mass spectrometry (SIMS) or the like.

In particular, boron and phosphorus are preferable because an apparatusused in a manufacturing line for amorphous silicon or low-temperaturepolysilicon can be used. Since the existing facility can be used,capital investment can be reduced.

Next, an insulating film to be the insulator 573 and an insulating filmto be the insulator 574 may be formed over the oxide 530 b and the dummygate. Stacking the insulating film to be the insulator 573 and theinsulating film to be the insulator 574 can provide a region where theregion 531, the oxide 530 c, and the insulator 550 overlap with eachother.

Specifically, after an insulating film to be the insulator 580 isprovided over the insulating film to be the insulator 574, theinsulating film to be the insulator 580 is subjected to CMP treatment,whereby part of the insulating film to be the insulator 580 is removedand the dummy gate is exposed. Then, when the dummy gate is removed,part of the insulator 573 in contact with the dummy gate is preferablyalso removed. Thus, the insulator 574 and the insulator 573 are exposedat a side surface of an opening provided in the insulator 580, and theregion 531 provided in the oxide 530 b is partly exposed at the bottomsurface of the opening. Next, an oxide film to be the oxide 530 c, aninsulating film to be the insulator 550, and a conductive film to be theconductor 560 are formed in this order in the opening, and then an oxidefilm to be the oxide 530 c, an insulating film to be the insulator 550,and a conductive film to be the conductor 560 are partly removed by CMPtreatment or the like until the insulator 580 is exposed; thus, thetransistor illustrated in FIG. 15 can be formed.

Note that the insulator 573 and the insulator 574 are not essentialcomponents. Design is appropriately set in consideration of requiredtransistor characteristics.

The cost of the transistor illustrated in FIG. 15 can be reduced becausean existing apparatus can be used and the conductor 542 is not provided.

Transistor Structure Example 6

Although FIG. 9 and FIGS. 10(A) and 10(B) illustrate a structure examplein which the conductor 560 that functions as a gate is formed in anopening of the insulator 580, a structure in which the insulator isprovided above the conductor can be employed, for example. A structureexample of such a transistor is illustrated in FIG. 16 and FIG. 17 .

FIG. 16(A) is a top view of a transistor and FIG. 16(B) is a perspectiveview of the transistor. FIG. 17(A) is a cross-sectional view taken alongX1-X2 in FIG. 16(A), and FIG. 17(B) is a cross-sectional view takenalong Y1-Y2 in FIG. 16(A).

The transistor illustrated in FIGS. 16(A) and 16(B) and FIGS. 17(A) and17(B) includes a conductor BGE having a function of a back gate, aninsulator BGI having a function of a gate insulating film, an oxidesemiconductor S, an insulator FGI having a function of a gate insulatingfilm, a conductor FGE having a function of a front gate, and a conductorWE having a function of a wiring. A conductor PE has a function of aplug for connecting the conductor WE to the oxide S or the conductorFGE. Note that an example in which the oxide semiconductor S includesthree layers of oxides S1, S2, and S3 is shown here.

Note that this embodiment can be implemented in combination with theother embodiments described in this specification as appropriate.

Embodiment 4

In this embodiment, the composition of a metal oxide that can be used inthe OS transistor described in the above embodiment will be described.

<Composition of Metal Oxide>

Note that in this specification and the like, CAAC (c-axis alignedcrystal) and CAC (Cloud-Aligned Composite) might be stated. Note thatCAAC refers to an example of a crystal structure, and CAC refers to anexample of a function or a material composition.

A CAC-OS or a CAC-metal oxide has a conducting function in a part of thematerial and an insulating function in another part of the material, andhas a function of a semiconductor as the whole material. Note that inthe case where the CAC-OS or the CAC-metal oxide is used in a channelformation region of a transistor, the conducting function is a functionthat allows electrons (or holes) serving as carriers to flow, and theinsulating function is a function that does not allow electrons servingas carriers to flow. By the complementary action of the conductingfunction and the insulating function, a switching function (On/Offfunction) can be given to the CAC-OS or the CAC-metal oxide. In theCAC-OS or the CAC-metal oxide, separation of the functions can maximizeeach function.

In addition, the CAC-OS or the CAC-metal oxide includes conductiveregions and insulating regions. The conductive regions have theabove-described conducting function, and the insulating regions have theabove-described insulating function. In some cases, the conductiveregions and the insulating regions in the material are separated at thenanoparticle level. In some cases, the conductive regions and theinsulating regions are unevenly distributed in the material. Moreover,the conductive regions are sometimes observed to be coupled in acloud-like manner with their boundaries blurred.

Furthermore, in the CAC-OS or the CAC-metal oxide, the conductiveregions and the insulating regions each having a size greater than orequal to 0.5 nm and less than or equal to 10 nm, preferably greater thanor equal to 0.5 nm and less than or equal to 3 nm are dispersed in thematerial in some cases.

The CAC-OS or the CAC-metal oxide is composed of components havingdifferent band gaps. For example, the CAC-OS or the CAC-metal oxide iscomposed of a component having a wide gap due to the insulating regionand a component having a narrow gap due to the conductive region. In thecase of the structure, when carriers flow, the carriers mainly flow inthe component having a narrow gap. Moreover, the component having anarrow gap complements the component having a wide gap, and carriersalso flow in the component having a wide gap in conjunction with thecomponent having a narrow gap. Therefore, in the case where theabove-described CAC-OS or CAC-metal oxide is used in a channel formationregion of a transistor, the transistor in an on state can achieve highcurrent driving capability, that is, high on-state current and highfield-effect mobility.

In other words, the CAC-OS or the CAC-metal oxide can also be referredto as a matrix composite or a metal matrix composite.

<Structure of Metal Oxide>

Oxide semiconductors are classified into a single-crystal oxidesemiconductor and a non-single-crystal oxide semiconductor. Examples ofthe non-single-crystal oxide semiconductors include a CAAC-OS (c-axisaligned crystalline oxide semiconductor), a polycrystalline oxidesemiconductor, an nc-OS (nanocrystalline oxide semiconductor), anamorphous-like oxide semiconductor (a-like OS), and an amorphous oxidesemiconductor.

As an oxide semiconductor used for a semiconductor of the transistor, athin film having high crystallinity is preferably used. With the use ofthe thin film, the stability or the reliability of the transistor can beimproved. Examples of the thin film include a thin film of asingle-crystal oxide semiconductor and a thin film of a polycrystallineoxide semiconductor. However, for forming the thin film of asingle-crystal oxide semiconductor or the thin film of a polycrystallineoxide semiconductor over a substrate, a high-temperature process or alaser heating process is needed. Thus, the manufacturing cost isincreased, and in addition, the throughput is decreased.

Non-Patent Document 1 and Non-Patent Document 2 have reported that anIn—Ga—Zn oxide having a CAAC structure (referred to as CAAC-IGZO) wasfound in 2009. It has been reported that CAAC-IGZO has c-axis alignment,a crystal grain boundary is not clearly observed, and CAAC-IGZO can beformed over a substrate at low temperatures. It has also been reportedthat a transistor using CAAC-IGZO has excellent electricalcharacteristics and high reliability.

In addition, in 2013, an In—Ga—Zn oxide having an nc structure (referredto as nc-IGZO) was found (see Non-Patent Document 3). It has beenreported that nc-IGZO has periodic atomic arrangement in a microscopicregion (for example, a region with a size greater than or equal to 1 nmand less than or equal to 3 nm) and there is no regularity of crystalorientation between different regions.

Non-Patent Document 4 and Non-Patent Document 5 have shown a change inaverage crystal size due to electron beam irradiation to thin films ofthe above CAAC-IGZO, the above nc-IGZO, and IGZO having lowcrystallinity. In the thin film of IGZO having low crystallinity,crystalline IGZO with a size of approximately 1 nm was observed evenbefore the electron beam irradiation. Thus, it has been reported thatthe existence of a completely amorphous structure was not observed inIGZO. In addition, it has been shown that the thin film of CAAC-IGZO andthe thin film of nc-IGZO each have higher stability to electron beamirradiation than the thin film of IGZO having low crystallinity. Thus,the thin film of CAAC-IGZO or the thin film of nc-IGZO is preferablyused for a semiconductor of a transistor.

The CAAC-OS has c-axis alignment, a plurality of nanocrystals areconnected in the a-b plane direction, and the crystal structure hasdistortion. Note that the distortion refers to a portion where thedirection of a lattice arrangement changes between a region with aregular lattice arrangement and another region with a regular latticearrangement in a region where the plurality of nanocrystals areconnected.

The nanocrystal is basically a hexagon but is not always a regularhexagon and is a non-regular hexagon in some cases. Furthermore, apentagonal or heptagonal lattice arrangement, for example, is includedin the distortion in some cases. Note that a clear crystal grainboundary (also referred to as grain boundary) cannot be observed even inthe vicinity of distortion in the CAAC-OS. That is, formation of acrystal grain boundary is inhibited due to the distortion of latticearrangement. This is probably because the CAAC-OS can toleratedistortion owing to a low density of arrangement of oxygen atoms in thea-b plane direction, an interatomic bond length changed by substitutionof a metal element, and the like.

Furthermore, the CAAC-OS tends to have a layered crystal structure (alsoreferred to as a layered structure) in which a layer containing indiumand oxygen (hereinafter, In layer) and a layer containing the element M,zinc, and oxygen (hereinafter, (M,Zn) layer) are stacked. Note thatindium and the element M can be replaced with each other, and when theelement M in the (M,Zn) layer is replaced with indium, the layer canalso be referred to as an (In,M,Zn) layer. Furthermore, when indium inthe In layer is replaced with the element M, the layer can also bereferred to as an (In,M) layer.

The CAAC-OS is an oxide semiconductor with high crystallinity. Bycontrast, in the CAAC-OS, it can be said that a reduction in electronmobility due to the crystal grain boundary is less likely to occurbecause a clear crystal grain boundary cannot be observed. Moreover,since the crystallinity of an oxide semiconductor might be decreased byentry of impurities, formation of defects, or the like, the CAAC-OS canbe regarded as an oxide semiconductor that has small amounts ofimpurities and defects (oxygen vacancies or the like). Thus, an oxidesemiconductor including a CAAC-OS is physically stable. Therefore, theoxide semiconductor including a CAAC-OS is resistant to heat and hashigh reliability. In addition, the CAAC-OS is stable with respect tohigh temperature in the manufacturing process (what is called thermalbudget). Accordingly, the use of the CAAC-OS for the OS transistor canextend a degree of freedom of the manufacturing process.

In the nc-OS, a microscopic region (for example, a region with a sizegreater than or equal to 1 nm and less than or equal to 10 nm, inparticular, a region with a size greater than or equal to 1 nm and lessthan or equal to 3 nm) has a periodic atomic arrangement. Furthermore,there is no regularity of crystal orientation between differentnanocrystals in the nc-OS. Thus, the orientation in the whole film isnot observed. Accordingly, in some cases, the nc-OS cannot bedistinguished from an a-like OS or an amorphous oxide semiconductordepending on the analysis method.

The a-like OS is an oxide semiconductor having a structure between thoseof the nc-OS and the amorphous oxide semiconductor. The a-like OScontains a void or a low-density region. That is, the a-like OS has lowcrystallinity as compared with the nc-OS and the CAAC-OS.

An oxide semiconductor has various structures with different properties.Two or more kinds of the amorphous oxide semiconductor, thepolycrystalline oxide semiconductor, the a-like OS, the nc-OS, and theCAAC-OS may be included in an oxide semiconductor of one embodiment ofthe present invention.

<Transistor including Oxide Semiconductor>

Next, the case where the above oxide semiconductor is used for atransistor will be described.

Note that when the above oxide semiconductor is used for a transistor,the transistor having high field-effect mobility can be achieved. Inaddition, the transistor having high reliability can be achieved.

Non-Patent Document 6 shows that the transistor using an oxidesemiconductor has an extremely low leakage current in a non-conductionstate; specifically, the off-state current per micrometer in the channelwidth of the transistor is of the order of yA/μm (10⁻²⁴ A/μm). Forexample, a low-power-consumption CPU utilizing a characteristic of a lowleakage current of the transistor using an oxide semiconductor isdisclosed (see Non-Patent Document 7).

Furthermore, application of a transistor using an oxide semiconductor toa display device that utilizes the characteristic of a low leakagecurrent of the transistor has been reported (see Non-Patent Document 8).In the display device, a displayed image is changed several tens oftimes per second. The number of times an image is changed per second iscalled a refresh rate. The refresh rate is also referred to as drivingfrequency. Such high-speed screen change that is hard for human eyes torecognize is considered as a cause of eyestrain. Thus, it is proposedthat the refresh rate of the display device is lowered to reduce thenumber of times of image rewriting. Moreover, driving with a loweredrefresh rate enables the power consumption of the display device to bereduced. Such a driving method is referred to as idling stop (IDS)driving.

Furthermore, an oxide semiconductor with a low carrier density ispreferably used for the transistor. In the case where the carrierdensity of an oxide semiconductor is reduced, the impurity concentrationin the oxide semiconductor is reduced to reduce the density of defectstates. In this specification and the like, a state with a low impurityconcentration and a low density of defect states is referred to as ahighly purified intrinsic or substantially highly purified intrinsicstate. For example, an oxide semiconductor has a carrier density lowerthan 8×10¹¹/cm³, preferably lower than 1×10¹¹/cm³, and furtherpreferably lower than 1×10¹⁰/cm³, and higher than or equal to1×10⁻⁹/cm³.

Moreover, a highly purified intrinsic or substantially highly purifiedintrinsic oxide semiconductor film has a low density of defect statesand accordingly may have a low density of trap states.

Charges trapped by the trap states in the oxide semiconductor take along time to be released and may behave like fixed charges. Thus, atransistor whose channel formation region is formed in an oxidesemiconductor having a high density of trap states has unstableelectrical characteristics in some cases.

Accordingly, in order to obtain stable electrical characteristics of thetransistor, it is effective to reduce the concentration of impurities inthe oxide semiconductor. In addition, in order to reduce theconcentration of impurities in the oxide semiconductor, the impurityconcentration in an adjacent film is also preferably reduced. Examplesof impurities include hydrogen, nitrogen, an alkali metal, an alkalineearth metal, iron, nickel, and silicon.

<Impurity>

Here, the influence of each impurity in the oxide semiconductor will bedescribed.

When silicon or carbon that is a Group 14 element is contained in theoxide semiconductor, defect states are formed in the oxidesemiconductor. Thus, the concentration of silicon or carbon in the oxidesemiconductor and the concentration of silicon or carbon in the vicinityof an interface with the oxide semiconductor (the concentration measuredby SIMS) are set to lower than or equal to 2×10¹⁸ atoms/cm³, preferablylower than or equal to 2×10¹⁷ atoms/cm³.

When the oxide semiconductor contains an alkali metal or an alkalineearth metal, defect states are formed and carriers are generated, insome cases. Thus, a transistor using an oxide semiconductor thatcontains an alkali metal or an alkaline earth metal is likely to havenormally-on characteristics. Therefore, it is preferable to reduce theconcentration of an alkali metal or an alkaline earth metal in the oxidesemiconductor. Specifically, the concentration of an alkali metal or analkaline earth metal in the oxide semiconductor obtained by SIMS is setto lower than or equal to 1×10¹⁸ atoms/cm³, preferably lower than orequal to 2×10¹⁶ atoms/cm³.

Furthermore, when containing nitrogen, the oxide semiconductor easilybecomes n-type by generation of electrons serving as carriers and anincrease in carrier density. As a result, a transistor using an oxidesemiconductor containing nitrogen as a semiconductor is likely to havenormally-on characteristics. Thus, nitrogen in the oxide semiconductoris preferably reduced as much as possible; for example, the nitrogenconcentration in the oxide semiconductor is set to lower than 5×10¹⁹atoms/cm³, preferably lower than or equal to 5×10¹⁸ atoms/cm³, furtherpreferably lower than or equal to 1×10¹⁸ atoms/cm³, and still furtherpreferably lower than or equal to 5×10¹⁷ atoms/cm³ in SIMS.

Furthermore, hydrogen contained in the oxide semiconductor reacts withoxygen bonded to a metal atom to be water, and thus forms an oxygenvacancy in some cases. Entry of hydrogen into the oxygen vacancygenerates an electron serving as a carrier in some cases. Furthermore,in some cases, bonding of part of hydrogen to oxygen bonded to a metalatom causes generation of an electron serving as a carrier. Thus, atransistor using an oxide semiconductor containing hydrogen is likely tohave normally-on characteristics. Accordingly, hydrogen in the oxidesemiconductor is preferably reduced as much as possible. Specifically,the hydrogen concentration in the oxide semiconductor obtained by SIMSis lower than 1×10²⁰ atoms/cm³, preferably lower than 1×10¹⁹ atoms/cm³,further preferably lower than 5×10¹⁸ atoms/cm³, and still furtherpreferably lower than 1×10¹⁸ atoms/cm³.

When an oxide semiconductor with sufficiently reduced impurities is usedfor a channel formation region of a transistor, stable electricalcharacteristics can be given.

The discovery of the CAAC structure and the nc structure has contributedto an improvement in electrical characteristics and reliability of atransistor using an oxide semiconductor having the CAAC structure or thenc structure, a reduction in manufacturing cost, and an improvement inthroughput. Furthermore, applications of the transistor to a displaydevice and an LSI utilizing the characteristics of a low leakage currentof the transistor have been studied.

Note that this embodiment can be implemented in combination with theother embodiments described in this specification as appropriate.

Embodiment 5

In this embodiment, a product image and examples of electronic devicesin which the memory device described in the above embodiment can be usedwill be described.

<Product Image>

First, FIG. 18 illustrates a product image applicable to the memorydevice according to one embodiment of the present invention. A region701 illustrated in FIG. 18 represents high temperature characteristics(High T operate), a region 702 represents high frequency characteristics(High f operate), a region 703 represents low off characteristics(Ioff), and a region 704 represents a region where the region 701, theregion 702, and the region 703 overlap one another.

Note that when the region 701 is intended to be satisfied, it can beroughly satisfied by using a carbide or a nitride such as siliconcarbide or gallium nitride for a channel formation region of atransistor. When intended to be satisfied, the region 702 can be roughlysatisfied by using a silicide such as single crystal silicon orcrystalline silicon for a channel formation region of a transistor. Inaddition, when intended to be satisfied, the region 703 can be roughlysatisfied by using an oxide semiconductor or a metal oxide for a channelformation region of a transistor.

The memory device according to one embodiment of the present inventioncan be favorably used for a product in the range represented by theregion 704, for example.

A conventional product has difficulty in satisfying all of the region701, the region 702, and the region 703. However, a transistor includedin the memory device according to one embodiment of the presentinvention includes a crystalline OS in a channel formation region. Inthe case where the crystalline OS is included in the channel formationregion, a memory device and an electronic device satisfying hightemperature characteristics, high frequency characteristics, and low offcharacteristics can be provided.

Note that examples of a product in the range represented by the region704 are an electronic device including a low-power consumption andhigh-performance CPU, an in-car electronic device required to have highreliability in a high-temperature environment, and the like. Morespecifically, FIGS. 19(A) to 19(E2), FIGS. 20(A) and 20(B), FIGS. 21(A)to 21(C), and FIGS. 22(A) and 22(B) illustrate examples of electronicdevices each including the memory device according to one embodiment ofthe present invention.

<Electronic Device>

The memory device according to one embodiment of the present inventioncan be used in a variety of electronic devices. In particular, thememory device according to one embodiment of the present invention canbe used as a memory incorporated in an electronic device. Thedescription will be made below using an information terminal, a gamemachine, a household appliance, a moving vehicle, a parallel computer, asystem including a server as examples of an electronic device in whichthe memory device according to one embodiment of the present inventioncan be used.

FIG. 19(A) illustrates an information terminal 5500 as an electronicdevice in which the memory device according to one embodiment of thepresent invention can be used, for example. The information terminal5500 is a mobile phone (smartphone). The information terminal 5500includes a housing 5510 and a display portion 5511, and a touch panel isprovided in the display portion 5511 and a button is provided in thehousing 5510 as input interfaces.

FIG. 19(B) illustrates a desktop information terminal 5300 as anelectronic device in which the memory device according to one embodimentof the present invention can be used, for example. The desktopinformation terminal 5300 includes a main body 5301 of the informationterminal, a display 5302, and a keyboard 5303.

Although FIG. 19(A) and FIG. 19(B) illustrate a smartphone and a desktopinformation terminal as examples, the memory device according to oneembodiment of the present invention may be used in a differentinformation terminal such as a PDA (Personal Digital Assistant), anotebook information terminal, or a workstation.

FIG. 19(C) illustrates a portable game machine 5200 as an electronicdevice in which the memory device according to one embodiment of thepresent invention can be used, for example. The portable game machine5200 includes a housing 5201, a display portion 5202, a button 5203, andthe like.

Although FIG. 19(C) illustrates a portable game machine as an example,the memory device according to one embodiment of the present inventionmay be used in a different game machine such as a home stationary gamemachine, an arcade game machine installed in an entertainment facility(e.g., a game center and an amusement park), or a throwing machine forbatting practice installed in sports facilities.

FIG. 19(D) illustrates an electric refrigerator-freezer 5800 as anelectronic device in which the memory device according to one embodimentof the present invention can be used, for example. The electricrefrigerator-freezer 5800 includes a housing 5801, a refrigerator door5802, a freezer door 5803, and the like.

Although FIG. 19(D) illustrates an electric refrigerator-freezer as anexample, the memory device according to one embodiment of the presentinvention may be used in a different household appliance such as avacuum cleaner, a microwave oven, an electric oven, a rice cooker, awater heater, an IH cooker, a water server, a heating-coolingcombination appliance such as an air conditioner, a washing machine, adrying machine, and an audio visual appliance, a digital camera, or adigital video camera.

FIG. 19 (E1) illustrates an automobile 5700 as an electronic device inwhich the memory device according to one embodiment of the presentinvention can be used, for example. FIG. 19 (E2) illustrates theperiphery of a windshield inside an automobile. FIG. 19 (E2) illustratesa display panel 5701, a display panel 5702, and a display panel 5703that are attached to a dashboard and a display panel 5704 that isattached to a pillar.

The display panel 5701 to the display panel 5703 can provide variouskinds of information by displaying a speedometer, a tachometer, amileage, a fuel meter, a gearshift indicator, an air-conditioningsetting, and the like. The content, layout, or the like of the displayon the display panels can be changed as appropriate to suit the user'spreference, so that the design can be improved. The display panel 5701to the display panel 5703 can also be used as lighting devices.

The display panel 5704 can compensate for the view obstructed by thepillar (a blind spot) by showing an image taken by an imaging device(not illustrated) provided for the automobile 5700. That is, displayingan image taken by the imaging device provided on the outside of theautomobile 5700 leads to compensation for the blind spot and enhancementof safety. In addition, showing an image for compensating for the areawhich a driver cannot see makes it possible for the driver to confirmsafety more easily and comfortably. The display panel 5704 can also beused as a lighting device.

Although FIGS. 19 (E1) and 19(E2) illustrate the automobile and thedisplay panel attached to the periphery of the windshield of theautomobile as examples, the memory device according to one embodiment ofthe present invention may be used in a different moving vehicle such asa train, a monorail train, a ship, or a flying object (a helicopter, anunmanned aircraft (a drone), an airplane, and a rocket).

FIG. 20(A) and FIG. 20(B) illustrate an information terminal 7000 as anelectronic device in which the memory device according to one embodimentof the present invention can be used. The information terminal 7000includes a housing 7010, a monitor portion 7012, a keyboard 7013, a port7015, and the like.

The keyboard 7013 and the port 7015 are provided on the housing 7010.Examples of the port 7015 include a USB port, a LAN port, an HDMI(High-Definition Multimedia Interface; HDMI is a registered trademark)port, and the like.

The monitor portion 7012 attached to the housing 7010 can be opened andclosed. FIG. 20(A) illustrates a state in which the monitor portion 7012is opened and FIG. 20(B) illustrates a state in which the monitorportion 7012 is closed. For example, the maximum angle of the monitorportion 7012 when opened is approximately 135° (see FIG. 20(A)).

The housing 7010 is provided with a cover 7011 that can be opened andclosed (see FIG. 20(B)). The memory device 100 according to oneembodiment of the present invention is incorporated in the housing 7010,and the memory device 100 can be attached or detached. A device forcooling the memory device 100 or a device for dissipating heat may beprovided in the housing 7010. When the cover 7011 is opened, the memorydevice 100 can be attached or detached, and thus the informationterminal 7000 has high extensibility. When a plurality of the memorydevices 100 is incorporated into the information terminal 7000, advancedgraphics processing, scientific computation, arithmetic operation ofartificial intelligence, and the like can be performed.

FIG. 21(A) illustrates a large-sized parallel computer 5400 as anelectronic device in which the memory device according to one embodimentof the present invention can be used, for example. In the parallelcomputer 5400, a plurality of rack mount computers 5420 are included ina rack 5410.

FIG. 21(B) is a schematic perspective view illustrating a structureexample of the computer 5420. The computer 5420 includes a motherboard5430, and the motherboard 5430 includes a plurality of slots 5431. A PCcard 5421 is inserted in the slot 5431. The PC card 5421 includes aconnection terminal 5423, a connection terminal 5424, and a connectionterminal 5425, each of which is connected to the motherboard 5430.

FIG. 21(C) is a schematic perspective view illustrating a structureexample of the PC card 5421. The PC card 5421 includes a board 5422, andincludes, over the board 5422, the connection terminal 5423, theconnection terminal 5424, the connection terminal 5425, a chip 5426, achip 5427, and the like.

The memory device according to one embodiment of the present invention,a CPU, a GPU (Graphics Processing Unit), a FPGA (Field Programmable GateArray), or the like is mounted as the chip 5426, the chip 5427, or thelike. The chip 5426, the chip 5427, and the like include a plurality ofterminals (not illustrated) for inputting and outputting signals. Theterminal is inserted in a socket (not illustrated) included in the PCcard 5421, whereby electrical connection to the PC card 5421 may beestablished, or the terminals are reflow-soldered, for example, towirings included in the PC card 5421, whereby electrical connection maybe established.

The connection terminal 5423, the connection terminal 5424, and theconnection terminal 5425 can serve, for example, as an interface forperforming power supply, signal input/output, or the like to the PC card5421. Examples of the standard for each of the connection terminal 5423,the connection terminal 5424, and the connection terminal 5425 includeUSB (Universal Serial Bus), SATA (Serial ATA), SCSI (Small ComputerSystem Interface), and HDMI (registered trademark) in the case ofoutputting an image signal.

In addition, the PC card 5421 includes a connection terminal 5428 overthe board 5422. The connection terminal 5428 has a shape with which theconnection terminal 5428 can be inserted in the slot 5431 of themotherboard 5430, and the connection terminal 5428 functions as aninterface for connecting the PC card 5421 and the motherboard 5430. Anexample of the standard for the connection terminal 5428 is PCI Express(also referred to as PCIe; PCI Express and PCIe are registeredtrademarks).

The parallel computer 5400 can perform large-scale scientificcomputation and large-scale arithmetic operation required for leaningand inference of artificial intelligence.

FIG. 22(A) illustrates a system including a server 5100 as an electronicdevice in which the memory device according to one embodiment of thepresent invention can be used, for example. FIG. 22(A) schematicallyillustrates a state where communication 5110 is performed between theserver 5100 and each of the information terminal 5500 and a desktopinformation terminal 5300.

A user can access the server 5100 from the information terminal 5500,the desktop information terminal 5300, and the like. Then, through thecommunication 5110 via the Internet, the user can receive a service thatthe administrator of the server 5100 offers. Examples of the serviceinclude e-mailing; SNS (Social Networking Service); online software;cloud storage; a navigation system; a translation system; an Internetgame; online shopping; financial trading in stocks, exchange, debts, andthe like; reservation system for public facilities, commercialfacilities, accommodation facilities, hospitals, and the like; andviewing of videos such as Internet shows, talks, and lectures.

In the case where the processing capacity in scientific computation,arithmetic operation required for leaning and inference of artificialintelligence, or the like is insufficient with the information terminal5500 or the desktop information terminal 5300 in the user's possession,the user can access the server 5100 through the communication 5110 andperform the computation or the arithmetic operation on the server 5100.

Artificial intelligence can be used in a service provided on the server5100, for example. For example, adopting artificial intelligence in anavigation system may enable the system to provide flexible guidance toa destination in consideration of a traffic congestion situation, atrain running status, or the like. As another example, adoptingartificial intelligence in a translation system may enable the system totranslate unique expressions such as dialects and slangs appropriately.As another example, using artificial intelligence in a reservationsystem for hospitals and the like may enable the system to introduce anappropriate hospital, clinic, or the like by judging from a user'ssymptom, degree of an injury, or the like.

Although FIG. 22(A) illustrates the state in which the communication5110 is performed between the server 5100 and each of the informationterminal 5500 and the desktop information terminal 5300, thecommunication 5110 may be performed between the server 5100 and anelectronic device other than the information terminal. For example, anembodiment may be IoT (Internet of Things), in which electronic devicesare connected to the Internet.

FIG. 22(B) schematically illustrates an example of a state in which thecommunication 5110 is performed between the server 5100 and each ofelectronic devices (the electric refrigerator-freezer 5800, the portablegame machine 5200, the automobile 5700, and a television device 5600).

Each of the electronic devices in FIG. 22(B) may use artificialintelligence. Arithmetic operation required for leaning and inference ofartificial intelligence, and the like can be performed on the server5100. For example, data necessary for arithmetic operation istransmitted from one of the electronic devices to the server 5100through the communication 5110, arithmetic operation of artificialintelligence is performed on the server 5100, and output data istransmitted from the server 5100 to the one of the electronic devicesthrough the communication 5110. Thus, the electronic device can use dataoutput by the arithmetic operation of artificial intelligence.

Note that the electronic devices illustrated in FIG. 22(B) are justexamples, and the communication 5110 may be performed between the server5100 and an electronic device not illustrated in FIG. 22(B).

As described above, the memory device according to one embodiment of thepresent invention can be used in a variety of electronic devices. Thememory device according to one embodiment of the present invention canbe operated with a small number of power sources, and thus the cost ofan electronic device using the memory device can be reduced. Inaddition, the memory device according to one embodiment of the presentinvention can have a small chip area, and thus an electronic device canbe reduced in size. Alternatively, more memory devices can be mounted onan electronic devices. Moreover, in the memory device according to oneembodiment of the present invention, data is not likely to be lost evenin a high-temperature environment, and thus high-speed operation ispossible. The use of the memory device according to one embodiment ofthe present invention can provide a highly reliable electronic devicethat can surely operate even in a high-temperature environment.

Note that this embodiment can be implemented in combination with theother embodiments described in this specification as appropriate.

REFERENCE NUMERALS

C11: capacitor, C12: capacitor, C13: capacitor, C14: capacitor, M11:transistor, M12: transistor, M13: transistor, M14: transistor, M21:transistor, M22: transistor, M23: transistor, M24: transistor, M26:transistor, N11: node, N12: node, N13: node, N14: node, S1: oxide, 31:sense amplifier circuit, 32: AND circuit, 33: analog switch, 34: analogswitch, 100: memory device, 101: layer, 105: memory device, 110:peripheral circuit, 115: peripheral circuit, 121: row decoder, 122: wordline driver circuit, 123: predecoder, 131: column decoder, 132: bit linedriver circuit, 133: precharge circuit, 134: sense amplifier circuit,135: output MUX circuit, 136: driver circuit, 137: circuit, 138: pagebuffer, 140: output circuit, 150: potential generation circuit, 151:regulator, 152: regulator, 153: power switch, 160: control logiccircuit, 161: SPI controller, 162: serial-parallel convertor, 163:instruction decoder circuit, 164: page address generation circuit, 165:command generation circuit, 166: byte address generation circuit, 167:parallel-serial converter, 168: status register, 201: layer, 210: memorycell array, 211: memory cell, 212: memory cell, 213: memory cell, 214:memory cell, 300: transistor, 311: substrate, 313: semiconductor region,314 a: low-resistance region, 314 b: low-resistance region, 315:insulator, 316: conductor, 320: insulator, 322: insulator, 324:insulator, 326: insulator, 328: conductor, 330: conductor, 350:insulator, 352: insulator, 354: insulator, 356: conductor, 360:insulator, 362: insulator, 364: insulator, 366: conductor, 370:insulator, 372: insulator, 374: insulator, 376: conductor, 380:insulator, 382: insulator, 384: insulator, 386: conductor, 500:transistor, 510: insulator, 510A: transistor, 510B: transistor, 510C:transistor, 510D: transistor, 510E: transistor, 511: insulator, 512:insulator, 514: insulator, 516: insulator, 518: conductor, 520:insulator, 521: insulator, 522: insulator, 524: insulator, 530: oxide,530 a: oxide, 530 b: oxide, 530 c: oxide, 531: region, 531 a: region,531 b: region, 540 a: conductor, 540 b: conductor, 542: conductor, 542a: conductor, 542 b: conductor, 543: region, 543 a: region, 543 b:region, 544: insulator, 545: insulator, 546: conductor, 546 a:conductor, 546 b: conductor, 547: conductor, 547 a: conductor, 547 b:conductor, 548: conductor, 550: insulator, 552: metal oxide, 560:conductor, 560 a: conductor, 560 b: conductor, 570: insulator, 571:insulator, 573: insulator, 574: insulator, 575: insulator, 576:insulator, 576 a: insulator, 576 b: insulator, 580: insulator, 581:insulator, 582: insulator, 584: insulator, 586: insulator, 600:capacitor, 610: conductor, 612: conductor, 620: conductor, 630:insulator, 650: insulator, 701: region, 702: region, 703: region, 704:region, 5100: server, 5110: communication, 5200: portable game machine,5201: housing, 5202: display portion, 5203: button, 5300: desktopinformation terminal, 5301: main body, 5302: display, 5303: keyboard,5400: parallel computer, 5410: rack, 5420: computer, 5421: PC card,5422: board, 5423: connection terminal, 5424: connection terminal, 5425:connection terminal, 5426: chip, 5427: chip, 5428: connection terminal,5430: motherboard, 5431: slot, 5500: information terminal, 5510:housing, 5511: display portion, 5600: television device, 5700:automobile, 5701: display panel, 5702: display panel, 5703: displaypanel, 5704: display panel, 5800: electric refrigerator-freezer, 5801:housing, 5802: refrigerator door, 5803: freezer door, 7000: informationterminal, 7010: housing, 7011: cover, 7012: monitor portion, 7013:keyboard, 7015: port

The invention claimed is:
 1. A semiconductor device comprising: first tofifth wirings; and first and second transistors, wherein the firsttransistor comprises a first oxide, a second oxide, a source electrode,a drain electrode, a gate electrode, a first insulator, and a secondinsulator, wherein the source electrode and the drain electrode areprovided over and in contact with the first oxide, wherein the firstinsulator is provided to cover the first oxide, the source electrode,and the drain electrode, wherein the first insulator comprises anopening portion, wherein the first oxide is exposed on a bottom surfaceof the opening portion, wherein a side surface of the source electrodeand a side surface of the drain electrode are exposed on a side surfaceof the opening portion, wherein the second oxide is provided in contactwith the first oxide, the side surface of the source electrode, and thedrain electrode in the opening portion, wherein the second insulator isprovided in the opening portion with the second oxide therebetween, andwherein the gate electrode is provided in the opening portion with thesecond insulator therebetween, wherein the second transistor comprises afront gate electrode and a back gate electrode, wherein one of thesource electrode and the drain electrode of the first transistor iselectrically connected to the first wiring, wherein the other of thesource electrode and the drain electrode of the first transistor iselectrically connected to the front gate electrode of the secondtransistor, wherein the gate electrode of the first transistor iselectrically connected to the third wiring, wherein one of a sourceelectrode and a drain electrode of the second transistor is electricallyconnected to the second wiring, wherein the other of the sourceelectrode and the drain electrode of the second transistor iselectrically connected to the fourth wiring, wherein the back gateelectrode of the second transistor is electrically connected to thefifth wiring, wherein the first wiring and the second wiring arearranged in parallel to each other, wherein the third wiring, the fourthwiring, and the fifth wiring are arranged in parallel to each other,wherein the first wiring is arranged to intersect with the fourthwiring, wherein each of the first and second transistors is an n-channeltransistor, and wherein each of the first and second transistorscomprises a metal oxide in a channel formation region.
 2. A memorydevice comprising: m×n (each of m and n is an integer greater than orequal to 1) memory cells; n first wirings; n second wirings; m thirdwirings; m fourth wirings; and m fifth wirings, wherein the m×n memorycells are arranged in a matrix, wherein each of the memory cells iselectrically connected to the first to fifth wirings, wherein each ofthe memory cells comprises first and second transistors, wherein thefirst transistor comprises a first oxide, a second oxide, a sourceelectrode, a drain electrode, a gate electrode, a first insulator, and asecond insulator, wherein the source electrode and the drain electrodeare provided over and in contact with the first oxide, wherein the firstinsulator is provided to cover the first oxide, the source electrode,and the drain electrode, wherein the first insulator comprises anopening portion, wherein the first oxide is exposed on a bottom surfaceof the opening portion, wherein a side surface of the source electrodeand a side surface of the drain electrode are exposed on a side surfaceof the opening portion, wherein the second oxide is provided in contactwith the first oxide, the side surface of the source electrode, and thedrain electrode in the opening portion, wherein the second insulator isprovided in the opening portion with the second oxide therebetween, andwherein the gate electrode is provided in the opening portion with thesecond insulator therebetween, wherein the second transistor comprises afront gate electrode and a back gate electrode, wherein one of thesource electrode and the drain electrode of the first transistor iselectrically connected to the first wiring, wherein the other of thesource electrode and the drain electrode of the first transistor iselectrically connected to the front gate electrode of the secondtransistor, wherein the gate electrode of the first transistor iselectrically connected to the third wiring, wherein one of a sourceelectrode and a drain electrode of the second transistor is electricallyconnected to the second wiring, wherein the other of the sourceelectrode and the drain electrode of the second transistor iselectrically connected to the fourth wiring, wherein the back gateelectrode of the second transistor is electrically connected to thefifth wiring, wherein the first wiring and the second wiring arearranged in parallel to each other, wherein the third wiring, the fourthwiring, and the fifth wiring are arranged in parallel to each other,wherein the first wiring is arranged to intersect with the fourthwiring, wherein each of the first and second transistors is an n-channeltransistor, and wherein each of the first and second transistorscomprises a metal oxide in a channel formation region.
 3. A memorydevice comprising: a memory cell array; and a peripheral circuit,wherein the memory cell array comprises m×n (each of m and n is aninteger greater than or equal to 1) memory cells, n first wirings, nsecond wirings, m third wirings, and m fourth wirings, wherein the m×nmemory cells are arranged in a matrix, wherein each of the memory cellsis electrically connected to the first to fourth wirings, wherein eachof the memory cells comprises first and second transistors, wherein eachof the first transistor and the second transistor comprises a firstoxide, a second oxide, a source electrode, a drain electrode, a gateelectrode, a first insulator, and a second insulator, wherein the sourceelectrode and the drain electrode are provided over and in contact withthe first oxide, wherein the first insulator is provided to cover thefirst oxide, the source electrode, and the drain electrode, wherein thefirst insulator comprises an opening portion, wherein the first oxide isexposed on a bottom surface of the opening portion, wherein a sidesurface of the source electrode and a side surface of the drainelectrode are exposed on a side surface of the opening portion, whereinthe second oxide is provided in contact with the first oxide, the sidesurface of the source electrode, and the drain electrode in the openingportion, wherein the second insulator is provided in the opening portionwith the second oxide therebetween, and wherein the gate electrode isprovided in the opening portion with the second insulator therebetween,wherein one of the source electrode and the drain electrode of the firsttransistor is electrically connected to the first wiring, wherein theother of the source electrode and the drain electrode of the firsttransistor is electrically connected to the gate electrode of the secondtransistor, wherein the gate electrode of the first transistor iselectrically connected to the third wiring, wherein one of the sourceelectrode and the drain electrode of the second transistor iselectrically connected to the second wiring, wherein the other of thesource electrode and the drain electrode of the second transistor iselectrically connected to the fourth wiring, wherein each of the firsttransistor and the second transistor is an n-channel transistor, whereineach of the first transistor and the second transistor comprises a metaloxide in a channel formation region, wherein the peripheral circuitcomprises a first circuit, a second circuit, and a controller, whereinthe first circuit is electrically connected to the first wiring and thesecond wiring, wherein the first circuit is configured to write data tothe memory cell and is configured to read data from the memory cell,wherein the second circuit is electrically connected to the third wiringand the fourth wiring, wherein the second circuit is configured to drivethe third wiring and the fourth wiring, and wherein the controller isconfigured to control the first circuit and the second circuit.
 4. Thememory device according to claim 3, wherein each of the memory cellscomprises a capacitor, wherein one electrode of the capacitor iselectrically connected to the gate electrode of the second transistor,and wherein the other electrode of the capacitor is electricallyconnected to a wiring supplied with a predetermined potential.
 5. Thememory device according to claim 3, wherein the first circuit supplies afirst potential or a second potential to the first wiring and the secondwiring, wherein the second circuit supplies the first potential or thesecond potential to the fourth wiring, and wherein the second circuitsupplies the first potential or a third potential to the third wiring.6. The memory device according to claim 3, wherein each of the firstcircuit and the second circuit comprises a transistor formed on asemiconductor substrate, and wherein the first transistor and the secondtransistor are stacked above the semiconductor substrate.